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In extrinsic semiconductors-...

In extrinsic semiconductors-

A

the conduction band and valence band overlap.

B

the gap between conduction band and valence band is more than 16 eV.

C

the gap between conduction band and valence band is near about 1 eV.

D

the gap between conduction band and valence band will be 100 eV and more.

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The correct Answer is:
C
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  1. When phosphorus and antimony are mixed in germanium, then

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  2. Intrinsic semiconductor is electrically neutral. Extrinsic semiconduct...

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  3. In extrinsic semiconductors-

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  4. Serious draw back of the semiconductor device is

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  5. The density of an electron-hole pair in a pure germanium is 3xx 10^(1...

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  6. A semiconductor has equal electron and hole concentration of 2xx10^(8)...

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  7. The majority charge carriers in P -type semiconductor are

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  8. A P -type semiconductor can be obtained by adding

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  9. P-type semiconductors are made by adding impurity element

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  10. In a n-type semiconductor, which of the following statement is true?

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  11. If n(e) and n(h) are the number of electrons and holes in a semiconduc...

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  12. In n type semiconductor, electrons are majority charge carriers but it...

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  13. When N-type of semiconductor is heated

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  14. PN-junction diode works as a insulator, if connected

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  15. With forward biased mode, the p-n junction diode

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  16. The forward biased diode comection is

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  17. Which one of the following represents forward bias diode?

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  18. In the following, reverse biased diode is.

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  19. The barrier potential of a p-n junction depends on the (i)type of sem...

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  20. The dominant mechanism for motion of charge carriers in forward and re...

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