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The carrier density (number of free elec...

The carrier density (number of free electrons per `m^(3)` ) in metallic conductoirs is of the order of

A

`10^(10)`

B

`10^(-16)`

C

`10^(22)`

D

`10^(28)`

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To determine the carrier density (number of free electrons per cubic meter) in metallic conductors, we can follow these steps: ### Step 1: Understand Carrier Density Carrier density refers to the number of charge carriers (free electrons in the case of metals) per unit volume. In metallic conductors, this value is typically very high due to the presence of a large number of free electrons. ### Step 2: Use the Formula for Current Density The relationship between current density (J), carrier density (N), charge of an electron (e), and drift velocity (V_d) is given by the formula: \[ J = N \cdot e \cdot V_d \] Where: - \( J \) is the current density (A/m²) - \( N \) is the carrier density (number of free electrons per m³) - \( e \) is the charge of an electron (approximately \( 1.6 \times 10^{-19} \) C) - \( V_d \) is the drift velocity (m/s) ### Step 3: Recognize the Order of Magnitude In metallic conductors, the carrier density is known to be very high. For most metals, the carrier density is on the order of \( 10^{28} \) electrons per cubic meter. This is a general value that applies to good conductors like copper, silver, and aluminum. ### Step 4: Conclusion Thus, the carrier density in metallic conductors is approximately: \[ N \approx 10^{28} \, \text{m}^{-3} \] ### Final Answer The carrier density in metallic conductors is of the order of \( 10^{28} \, \text{m}^{-3} \). ---
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Calculate the drift speed developed in a metal wire when V potential difference is applied across length l of the wire. The number of free electrons per unit volume is n and conductivity of the material is sigma .

What is the order of density of free electrons in an intrinsic semiconductor ?

Knowledge Check

  • In diamond, the number of free electrons are:

    A
    1
    B
    2
    C
    0
    D
    4
  • In a metal in the solid state, such as a copper wire, the atoms are strongly bound to one another and occupý fixed positions. Some electrons (called the conductor electrons) are free to move in the body of the metal while the other are strongly bound to their atoms. In good conductors, the number of free electrons is very large of the order of 10^(28) electrons per cubic metre in copper. The free electrons are in random motion and keep colliding with atoms. At room temperature, they move with velocities of the order of 10^5 m/s. These velocities are completely random and there is not net flow of charge in any directions. If a potential difference is maintained between the ends of the metal wire (by connecting it across a battery), an electric field is set up which accelerates the free electrons: These accelerated electrons frequently collide with the atoms of the conductor, as a result, they acquire a constant speed called the drift speed which is given by V_e = 1/enA where I = current in the conductor due to drifting electrons, e = charge of electron, n = number of free electrons per unit volume of the conductor and A = area of cross-section of the conductor. A current of 1 A flows through a copper wire. The number of electrons passing through any cross-section of the wire in 1.6 sec is (charge of a electron = 1.6 xx 10^(-19 c) .

    A
    `10^(25)`
    B
    `10^(22)`
    C
    `10^(25)`
    D
    `10^(28)`
  • In a metal in the solid state, such as a copper wire, the atoms are strongly bound to one another and occupý fixed positions. Some electrons (called the conductor electrons) are free to move in the body of the metal while the other are strongly bound to their atoms. In good conductors, the number of free electrons is very large of the order of 10^(28) electrons per cubic metre in copper. The free electrons are in random motion and keep colliding with atoms. At room temperature, they move with velocities of the order of 10^5 m/s. These velocities are completely random and there is not net flow of charge in any directions. If a potential difference is maintained between the ends of the metal wire (by connecting it across a battery), an electric field is set up which accelerates the free electrons: These accelerated electrons frequently collide with the atoms of the conductor, as a result, they acquire a constant speed called the drift speed which is given by V_e = 1/enA where I = current in the conductor due to drifting electrons, e = charge of electron, n = number of free electrons per unit volume of the conductor and A = area of cross-section of the conductor. The drift speed of free electrons in a conductor depends upon

    A
    the material of the conductor
    B
    the temperature of the conductor
    C
    the potential difference applied across the ends of the conductor
    D
    the area of cross-section of the conductor
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    The drift velocity of free electrons in metals is of the order of_______.

    Assess the kinetic energy of conduction electrons in a metal in which their concentration is of the order of 10^(29)m^(-3) .

    Using the microscopic form of Ohm's law (J=sigma E) , prove that conductivity of a metal can be written as sigma="ne"mu . Here n is the number of free electrons per unit volume and mu is mobility of free electrons . In case of semiconductors there are two types of conduction particles, one is free electrons and the other is known as a hole. Charge on the hole may be assumed to be equal and opposite of that on electron. The number density of free electrons and holes in the semiconducting material are n and p respectively. Assuming mu_e and mu_h as mobility of free electrons and holes respectively , write the exopression of conductivity of the semiconducting material.

    In a metal in the solid state, such as a copper wire, the atoms are strongly bound to one another and occupý fixed positions. Some electrons (called the conductor electrons) are free to move in the body of the metal while the other are strongly bound to their atoms. In good conductors, the number of free electrons is very large of the order of 10^(28) electrons per cubic metre in copper. The free electrons are in random motion and keep colliding with atoms. At room temperature, they move with velocities of the order of 10^5 m/s. These velocities are completely random and there is not net flow of charge in any directions. If a potential difference is maintained between the ends of the metal wire (by connecting it across a battery), an electric field is set up which accelerates the free electrons: These accelerated electrons frequently collide with the atoms of the conductor, as a result, they acquire a constant speed called the drift speed which is given by V_e = 1/enA where I = current in the conductor due to drifting electrons, e = charge of electron, n = number of free electrons per unit volume of the conductor and A = area of cross-section of the conductor. Choose the current statements

    If n_i, n_e and n_h represents the number of intrinsic charge carrier, number of free electrons and number of holes respectively in semiconductor, then relation n_h n_e=n_i^2 is true for