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The number of silicon atoms per m^(3) is...

The number of silicon atoms per `m^(3)` is `5 xx 10^(28)`. This is doped simultaneously with `5 xx 10^(22)` atoms per `m^(3)` of Arsenic and `5 xx 10^(20)` per `m^(3)` atoms of Indium. Calcualte the number of electrons and holes. Given that `n_(i) = 1.5 xx 10^(16) m^(-3)`. Is the material n-type or p-type?

Text Solution

Verified by Experts

`n_(c) = 4.95 xx 10^(22), n_(h) = 4.75 xx 10^(9)`, n-type since `n_(e) gt gt n_(h)`
For charge neutrality `N_(D)-N_(A) = n_(e).n_(h) = n_(i)^(2)`
Solving these equations, `n_(e) = 1/2 [(N_(D)-N_(A)) + sqrt((N_(D)-N_(A))^(2) + 4n_(i)^(2))]`
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The number of silicon atoms per m^(3) is 5xx10^(28) . This is doped simultaneously with 5xx10^(22) atoms per m^(3) of Arsenic and 5xx10^(20) per m^(3) atoms of Indium. Calculate the number of electrons and holes. Given that n_(i)=1.5xx10^(16)m^(-3) . Is the material n-type or p-type?

Suppose a pure Si crystal has 5 xx 10^(28) atoms m^(-3) . It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and holes. Given that n_(i) = 1.5 xx 10^(16) m^(-3) .

Knowledge Check

  • In one atom of As is added per 10^(3) atoms of Ge then the number of free electron in one mole of Ge will be ……..

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    `10^(17)`
    B
    `10^(20)`
    C
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  • The number density of electron is 7xx10^(12)m^(-3) and number density of hole is 7xx10^(12)m^(-3) . This semiconductor will be ….. Type.

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    B
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    D
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  • The radius of the innermost electron orbit of a hydrogen atom is 5.3xx10^(-11) m. What are the radii of the n = 2 and n = 3 orbits?

    A
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    B
    `R_(2)=2.12xx10^(-10)m,R_(3)=4.77Åxx10^(-11)m`
    C
    `R_(2)=2.12Å,R_(3)=4.77Å`
    D
    `R_(2)=2.12xx10^(10)Å,R_(3)=4.77xx10^(-10)Å`

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