Home
Class 12
PHYSICS
C, Si and Ge have same lattice structure...

C, Si and Ge have same lattice structure. Why is C insulator while Si and Ge intrinsic semiconductors?

Text Solution

Verified by Experts

Atoms require less energy to release electron from the orbit away from nucleus.
There are four electrons in the second orbit in `""_(6)C`, four electrons in third orbit of `""_(14)Si` and four electrons in the fourth orbit of `""_(32)Ge`.
Hence, energy required to take out an electron from these atom (ionisation energy) will be least for Ge, more than that for Si and highest for C or the resistivity of material depends on the energy difference between their conduction and valence band and for C this energy difference is 5.4 eV, for Si it is 1.1 eV and for Ge it is 0.7 eV.
Hence, number of free electrons for conduction in Ge and Si are significant but neligibly small for C so Ge and Si are semiconductor and C is insulator.
Doubtnut Promotions Banner Mobile Dark
|

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS : MATERIALS, DEVICES AND SIMPLE CIRCUITS

    KUMAR PRAKASHAN|Exercise Section-B : Numericals (Numerical From Textual Exercise)|15 Videos
  • SEMICONDUCTOR ELECTRONICS : MATERIALS, DEVICES AND SIMPLE CIRCUITS

    KUMAR PRAKASHAN|Exercise Section-B : Numericals (Numerical From .DARPAN. Based On Textbook)|14 Videos
  • SEMICONDUCTOR ELECTRONICS : MATERIALS, DEVICES AND SIMPLE CIRCUITS

    KUMAR PRAKASHAN|Exercise Section-A : Questions - Answers|51 Videos
  • SAMPLE QUESTION PAPER

    KUMAR PRAKASHAN|Exercise PART-B SECTION-C|5 Videos
  • WAVE OPTICS

    KUMAR PRAKASHAN|Exercise SECTION-D (MULTIPLCE CHOICE QUESTIONS (MCQS)) (MCQS FROM DARPAN BASED ON TEXTBOOK)|239 Videos

Similar Questions

Explore conceptually related problems

Sn, Si and Ge have the same lattice structure . Why Sn is a conductor while Si and Ge are Semiconductor?

Sn, C, and Si, Ge are all group XIV elements. Yet, Sn is a conductor, C is an insulator while Si and Ge are semiconductors. Why?

Knowledge Check

  • C and Si both have same lattice structure, having 4 bonding electrons in each. However, C is insulator where as Si is intrinsic semiconductor. This is because, …….

    A
    in case of C the valence band is not completely filled at absolute zero temperature .
    B
    in case of C the conduction band is partly filled even at absolute zero temperature.
    C
    the four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third.
    D
    the four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit.
  • ……as a impurity, when added in Si or Ge P- type semiconductor is obtained.

    A
    Arsenic
    B
    Antimony
    C
    Phosphorus
    D
    Boron
  • …… as a impurity, when added in Si or Ge P - type semiconductor is obtained.

    A
    Arsenic
    B
    Antimony
    C
    Phosphorus
    D
    Boron
  • Similar Questions

    Explore conceptually related problems

    Explain why is O= C = O non-polar while R-O-R is polar ?

    There are two current carrying planar coils made each from identical wires of length L. C_1 is circular (radius R) and C_2 is square (side a). They are so constructed that they have same frequency of oscillation when they are placed in the same uniform B and carry the same current. Find a in terms of R.

    Four candidates A, B, C, D have applied for the assignment to coach a school cricket team. If A is twice as likely to be selected as B, and B and C are given about the same chance of being selected, while C is twice as likely to be selected as D, what are the probabilities that (i) C will be selected ? (ii) A will not be selected ?

    Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to (E_(g))_(C),(E_(g))_(Si) and (E_(g))_(Ge) . Which of the following statements is true?

    Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to (E_(g))_(C ), (E_(g))_(Si) and (E_(g))_(Ge) . Which of the following statements is true?