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A p-n junction has acceptor impurity con...

A p-n junction has acceptor impurity concentration of `10^(17) cm^(-3)` in the p-side and donor impurity concentration of `10^(16)cm^(-3)` in the n-side. What is the contact potential at the junction? (kT=thermal energy , instrinsic carrier concentration `n_(i)=1.6xx10^(10) cm^(-3)`

A

(a)`((kT)/(e ))ln(4xx10^(12))`

B

(b)`((kT)/(e ))ln(2.5xx10^(23))`

C

(c)`((kT)/(e ))ln(10^(23))`

D

(d)`((kT)/(e ))ln(10^(9))`

Text Solution

AI Generated Solution

The correct Answer is:
To find the contact potential at the junction of a p-n junction with given impurity concentrations, we can use the formula for contact potential \( V_b \): \[ V_b = \frac{kT}{q} \ln \left( \frac{N_A N_D}{n_i^2} \right) \] where: - \( N_A \) = Acceptor impurity concentration (in the p-side) - \( N_D \) = Donor impurity concentration (in the n-side) - \( n_i \) = Intrinsic carrier concentration - \( k \) = Boltzmann's constant - \( T \) = Temperature in Kelvin - \( q \) = Charge of an electron (approximately \( 1.6 \times 10^{-19} \) C) ### Step 1: Identify the given values - \( N_A = 10^{17} \, \text{cm}^{-3} \) - \( N_D = 10^{16} \, \text{cm}^{-3} \) - \( n_i = 1.6 \times 10^{10} \, \text{cm}^{-3} \) - \( kT \) is given as thermal energy (we will assume a typical room temperature of about 300 K for calculations). ### Step 2: Calculate the product \( N_A N_D \) \[ N_A N_D = (10^{17}) \times (10^{16}) = 10^{33} \, \text{cm}^{-6} \] ### Step 3: Calculate \( n_i^2 \) \[ n_i^2 = (1.6 \times 10^{10})^2 = 2.56 \times 10^{20} \, \text{cm}^{-6} \] ### Step 4: Substitute into the logarithm \[ \frac{N_A N_D}{n_i^2} = \frac{10^{33}}{2.56 \times 10^{20}} = 3.90625 \times 10^{12} \] ### Step 5: Calculate the natural logarithm \[ \ln(3.90625 \times 10^{12}) \approx \ln(3.90625) + \ln(10^{12}) \approx 1.360 + 27.631 \approx 28.991 \] ### Step 6: Substitute into the contact potential formula Assuming \( kT \approx 0.0259 \, \text{eV} \) at room temperature: \[ V_b = \frac{0.0259}{1.6 \times 10^{-19}} \times 28.991 \] ### Step 7: Calculate \( V_b \) \[ V_b \approx 0.0259 \times 28.991 \approx 0.751 \, \text{V} \] ### Final Answer The contact potential at the junction is approximately \( 0.751 \, \text{V} \). ---
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Knowledge Check

  • A semiconductor has equal electron and hole concentration of 6xx10^(8)//m^(3) . On doping with certain impurity, electron concentration increases to 9xx10^(12)//m^(3) . (i) Identify the new semiconductor obtained after doping. (ii) Calculate the new hole concentration. (iii) How does the energy gap vary with doping?

    A
    `2xx10^4` per `m^3`
    B
    `2xx10^2` per `m^3`
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    A
    `4.5xx10^9 m^(-3)`
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