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The neutral region formed at P-n junctio...

The neutral region formed at P-n junction due to recombination of electrons and holes is

A

Fermi layer

B

Depletion layer

C

Acceptor layer

D

All the above

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The correct Answer is:
To solve the question regarding the neutral region formed at a P-N junction due to recombination of electrons and holes, we can follow these steps: ### Step-by-Step Solution: 1. **Understanding P-N Junction**: - A P-N junction is formed by joining P-type and N-type semiconductors. The P-type semiconductor has an abundance of holes (positive charge carriers), while the N-type semiconductor has an abundance of electrons (negative charge carriers). **Hint**: Remember that P-type has holes and N-type has electrons. 2. **Recombination Process**: - When the P-N junction is formed, electrons from the N-side move towards the P-side and recombine with holes. This recombination leads to the formation of fixed ions at the junction. **Hint**: Think about how electrons and holes interact at the junction. 3. **Formation of the Depletion Region**: - As electrons recombine with holes, they leave behind charged ions (positive ions on the P-side and negative ions on the N-side). This creates a region around the junction that is devoid of free charge carriers, known as the depletion region. **Hint**: Focus on the concept of charge neutrality and how it changes at the junction. 4. **Characteristics of the Depletion Region**: - The depletion region is characterized by the absence of free electrons and holes, leading to a built-in electric field due to the fixed ions. This region acts as an insulator and prevents further movement of charge carriers across the junction. **Hint**: Consider the role of the electric field in the depletion region. 5. **Identifying the Correct Term**: - The question asks for the term that describes the neutral region formed at the P-N junction due to recombination. The correct term for this region is the "depletion layer". **Hint**: Recall the terminology used in semiconductor physics. ### Final Answer: The neutral region formed at the P-N junction due to the recombination of electrons and holes is called the **depletion layer**.
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In p-n junction diode, near junction holes combine with electrons, and impurity ions form a barrier potential which opposes the recombination of electron-hole pairs. Value of barriers potential for Si is 0.7 volt and for Ge is 0.3 V. thus charge density at the junction becomes zero and an electric field is produced near junction. this region is called depletion layer. Thickness of depletion layer is of the order of 10^(-6) meter. in forward bias p terminal is connected with the positive terminal of cell and n is connected with negative terminal of cell and n is connected with negative terminal of cell. as forward voltage is increased, current increases exponentially. Correct graph for variation of charge density with distance from the junction is

In p-n junction diode, near junction holes combine with electrons, and impurity ions form a barrier potential which opposes the recombination of electron-hole pairs. Value of barriers potential for Si is 0.7 volt and for Ge is 0.3 V. thus charge density at the junction becomes zero and an electric field is produced near junction. this region is called depletion layer. Thickness of depletion layer is of the order of 10^(-6) meter. in forward bias p terminal is connected with the positive terminal of cell and n is connected with negative terminal of cell and n is connected with negative terminal of cell. as forward voltage is increased, current increases exponentially. For Si diode minimum required forward voltage so that current can flow is

AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE -I (P-N JUNCTION DIODE)
  1. The neutral region formed at P-n junction due to recombination of elec...

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  2. The potential barrier at a P-n junction is due to the charges on eithe...

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  3. In an unbiased p-n junction, holes diffuse from the p-region ton-regio...

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  4. Can we take one slab of p-type semiconductor and physically join it to...

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  5. In a P-N junction diode which is not connected to any circuit-

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  6. The electrical resistance of depletion layer is large because

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  7. In a PN junction

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  8. The barrier potentials for silicon and Germanium diodes are about

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  9. The dominant mechanism for motion of charge carriers in forward and re...

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  10. Potential barrier developed in a junction diode opposes the flow of

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  11. The correct curve between potential and distance near P-N junction is

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  12. When p-n junction diode is forward biased, then

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  13. Which of following statement is not correct ?

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  14. The resistance of an ideal diode in forward biased condition is

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  15. The resistance of an ideal diode in reverse biased condition is

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  16. In forward biased condition, the p-n junction diode behaves as

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  17. Reverse bias applied to a junction diode

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  18. In the middle of the depletion layer of a reverse-biased p - n junctio...

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  19. Avalanche breakdown in a semiconductor diode occurs when-

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  20. When a p-n junction diode is reverse biased the flow of current across...

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