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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE -I (P-N JUNCTION DIODE)
- The neutral region formed at P-n junction due to recombination of elec...
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- The potential barrier at a P-n junction is due to the charges on eithe...
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- In an unbiased p-n junction, holes diffuse from the p-region ton-regio...
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- Can we take one slab of p-type semiconductor and physically join it to...
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- In a P-N junction diode which is not connected to any circuit-
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- The electrical resistance of depletion layer is large because
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- In a PN junction
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- The barrier potentials for silicon and Germanium diodes are about
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- The dominant mechanism for motion of charge carriers in forward and re...
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- Potential barrier developed in a junction diode opposes the flow of
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- The correct curve between potential and distance near P-N junction is
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- When p-n junction diode is forward biased, then
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- Which of following statement is not correct ?
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- The resistance of an ideal diode in forward biased condition is
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- The resistance of an ideal diode in reverse biased condition is
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- In forward biased condition, the p-n junction diode behaves as
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- Reverse bias applied to a junction diode
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- In the middle of the depletion layer of a reverse-biased p - n junctio...
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- Avalanche breakdown in a semiconductor diode occurs when-
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- When a p-n junction diode is reverse biased the flow of current across...
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