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In the middle of the depletion layer of ...

In the middle of the depletion layer of a reverse - biased `p - n ` junction , the

A

electron field is zero

B

potential is maximum

C

electron field is maximum

D

potential is zero

Text Solution

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The correct Answer is:
To solve the question regarding the characteristics of the depletion layer in a reverse-biased p-n junction, we need to analyze the behavior of the electric field, potential, and charge carriers in this configuration. ### Step-by-Step Solution: 1. **Understanding Reverse Bias**: In a reverse-biased p-n junction, the positive terminal of the battery is connected to the n-type semiconductor, and the negative terminal is connected to the p-type semiconductor. This setup widens the depletion region as it pulls majority carriers away from the junction. **Hint**: Remember that in reverse bias, the junction is designed to block current flow. 2. **Depletion Region**: The depletion layer is the region around the p-n junction where charge carriers (holes in p-type and electrons in n-type) are depleted. This region is devoid of free charge carriers, leading to the formation of an electric field. **Hint**: Focus on the concept of charge carriers being pulled away from the junction. 3. **Electric Field in the Depletion Layer**: In the depletion region, there is an electric field directed from the n-type side to the p-type side. This electric field is maximum at the edges of the depletion region and decreases towards the center. **Hint**: The electric field is influenced by the charge distribution in the depletion region. 4. **Potential in the Depletion Layer**: The electric potential is maximum at the center of the depletion layer. As you move away from the center towards either side (n-type or p-type), the potential decreases. **Hint**: Remember that potential is related to the work done against the electric field. 5. **Behavior of Charge Carriers**: In the depletion region, the concentration of charge carriers is very low, and thus, the electric field is strong. However, the potential barrier is at its maximum in the middle of the depletion layer. **Hint**: Consider how the potential barrier affects the movement of charge carriers. 6. **Conclusion**: In summary, in the middle of the depletion layer of a reverse-biased p-n junction: - The electric field is maximum. - The potential is maximum. - The concentration of charge carriers (electrons and holes) is at its minimum. ### Final Answer: In the middle of the depletion layer of a reverse-biased p-n junction, the electric field is maximum, and the potential is also maximum.

To solve the question regarding the characteristics of the depletion layer in a reverse-biased p-n junction, we need to analyze the behavior of the electric field, potential, and charge carriers in this configuration. ### Step-by-Step Solution: 1. **Understanding Reverse Bias**: In a reverse-biased p-n junction, the positive terminal of the battery is connected to the n-type semiconductor, and the negative terminal is connected to the p-type semiconductor. This setup widens the depletion region as it pulls majority carriers away from the junction. **Hint**: Remember that in reverse bias, the junction is designed to block current flow. ...
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Knowledge Check

  • The n-side of the depletion layer of a p-n junction :

    A
    always has same width as of the p-side.
    B
    has no bound charges.
    C
    is negatively charged.
    D
    is positively charged.
  • In the depletion region of an unbiased p-n junction diode there are

    A
    Only electrons
    B
    Only fixed ions
    C
    Only holes
    D
    Both electrons and holes
  • In the depletion region of the an unbaised p-n junction diode, there are

    A
    only free electrons.
    B
    only holes.
    C
    both electrons and holes.
    D
    only immobile charged ions.
  • Similar Questions

    Explore conceptually related problems

    Explain the formation of depletion layer and potential barier in a p-n junction.

    Define the terms 'depletion layer and barrier potential' for a p-n junction. How does (i) an increase in the doping concentration, and (ii) biasing across the junction, affect the width of the depletion layer ?

    Which of the following shows a reverse biased p-n junction diode ?

    The reverse biasing in a p-n junction diode

    The reverse biasing in a PN junction diode