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A Si and a Ge diode has identical physic...

A `Si` and a `Ge` diode has identical physical dimensions. The band gap in `Si` is larger than that in `Ge`. An indentical reverse bias is applied across the diodes.

A

The reverse current in `Ge` is larger than that in `Si`

B

The reverse current in `Si` is larger than that in `Ge`

C

The reverse current is identical in the two diodes

D

The relative magnitude of the reverse currents cannot be determined from the given data only.

Text Solution

Verified by Experts

The correct Answer is:
C
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Knowledge Check

  • Reverse bias applied to a junction diode

    A
    Lowers the potential barrier
    B
    Raises the potential barrier
    C
    Increases the majority carrier current
    D
    Increases the minority carrier current

  • Reverse bias applied to a junction diode

    A
    Lower the potential barrier
    B
    Raises the potential barrier
    C
    Increases the majority carriers current
    D
    Increasess the minority carrier current

  • In a reverse bias diode when the applied voltage changes is IV, the current is found to change by 0.5muA . The reverse bias resistance of the diode is:

    A
    `2 times 10^5 Omega`
    B
    `2 times 10^6 Omega`
    C
    `200 Omega`
    D
    `2 Omega`

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