In a p-n junction diode the thickness of depletion layer is `2 xx 10^(-6) `m and barrier potential is 0.3 V. The intensity of the electric field at the junction is :

Options

A. `0.6 xx 10^(-6) Vm^(-1) ` from n to p side
B. ` 0.6 xx 10^(-6) Vm^(-1) ` from p to n side
C. `1.5 xx 10^5 Vm^(-1) ` from n to p side
D. `1.5 xx 10^5 Vm^(-1) ` from p to n side

Answer

To find the intensity of the electric field at the junction of a p-n diode, we can use the relationship between electric field (E), voltage (V), and distance (d). The formula for electric field is given by:

\[ E = \frac{V}{d} \]

Where:
- \( E \) is the electric field intensity (in volts per meter, V/m),
- \( V \) is the barrier potential (in volts, V),
- \( d \) is the thickness of the depletion layer (in meters, m).

### Step 1: Identify the given values
From the problem statement, we have:
- Thickness of the depletion layer, \( d = 2 \times 10^{-6} \) m
- Barrier potential, \( V = 0.3 \) V

### Step 2: Substitute the values into the formula
Now, we will substitute the known values into the electric field formula:

\[ E = \frac{0.3 \, \text{V}}{2 \times 10^{-6} \, \text{m}} \]

### Step 3: Calculate the electric field
Now, we perform the calculation:

\[ E = \frac{0.3}{2 \times 10^{-6}} \]

\[ E = \frac{0.3}{2} \times 10^{6} \]

\[ E = 0.15 \times 10^{6} \]

\[ E = 1.5 \times 10^{5} \, \text{V/m} \]

### Final Answer
The intensity of the electric field at the junction is:

\[ E = 1.5 \times 10^{5} \, \text{V/m} \]

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