Home
Class 12
PHYSICS
The forbidden gap in germanium crystal i...

The forbidden gap in germanium crystal is

A

0.7eV

B

`1.12 xx 10^(-19)`J

C

Both 1 and 2

D

1.1eV

Text Solution

Verified by Experts

The correct Answer is:
C
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR DEVICES

    AAKASH SERIES|Exercise EXERCISE -II (P-N JUNCTION DIODE)|26 Videos
  • SEMICONDUCTOR DEVICES

    AAKASH SERIES|Exercise EXERCISE -II (TRANSISTORS )|9 Videos
  • SEMICONDUCTOR DEVICES

    AAKASH SERIES|Exercise EXERCISE -I (ASSERTION & REASON)|12 Videos
  • RAY OPTICS

    AAKASH SERIES|Exercise PROBLEMS ( LEVEL-II)|60 Videos
  • UNITS AND MEASUREMENT

    AAKASH SERIES|Exercise PRACTICE EXERCISE|45 Videos

Similar Questions

Explore conceptually related problems

The maximum wavelength of electromagnetic radiation, which can create a hole-electron pair in germanium. (Given that forbidden energy gap in germanium is 0.72 eV)

The valance of the impurity atom that is to be added to germanium crystal so as to make it a N -type semiconductor, is

The intrinsic carrier density in germanium crystal at 300 K is 2.5xx10^(13) per cm^(3) if the electron density in an N-type germanium crystal at 300 K be 0.5xx10^(17) per cm^(3) the hle density (per cm^(3) ) in this N-type crystal at 300 K would be expected around-

A semiconductor X is made by doping a germanium crystal with aresenic (Z = 33). A second semiconductor Y is made by doping germanium with indium (Z= 49). X and Y are used to form a junction as shown in figure and connected to a battery as shown. Which of following statement is correct?

find the maximum wavelength of electromagnetic radiation which can create a hole-electron pair in germanium.The band gap in germanium is 0.65eV.

The for bidden gap in the energy bands of sillcon is

If a small amount of antimony is added to germanium crystal

If a small amount of antimony is added to germanium crystal

Simian gap is

The energy band gap is maximum in