Home
Class 12
PHYSICS
Suppose a pure Si-crystal has 5xx10^(28)...

Suppose a pure Si-crystal has `5xx10^(28) "atoms" m^(-3)`. It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and holes. Give that `n_(i)=1.5xx10^(16)m^(-3)`.

Text Solution

AI Generated Solution

To solve the problem, we need to calculate the number of electrons and holes in a silicon crystal that has been doped with arsenic. Here’s a step-by-step breakdown of the solution: ### Step 1: Understand the Given Data - The concentration of silicon atoms in the crystal is given as \( N_{Si} = 5 \times 10^{28} \, \text{atoms/m}^3 \). - The doping concentration of arsenic (As), which is a pentavalent impurity, is given as \( 1 \, \text{ppm} \). - The intrinsic carrier concentration of silicon is given as \( n_i = 1.5 \times 10^{16} \, \text{m}^{-3} \). ### Step 2: Convert ppm to a Fraction ...
Doubtnut Promotions Banner Mobile Dark
|

Topper's Solved these Questions

  • ELECTRONIC DEVICES

    PRADEEP|Exercise SAMPLE PROBLEM|2 Videos

  • ELECTRONIC DEVICES

    PRADEEP|Exercise CONCEPTUAL PROBLEMS|1 Videos

  • ELECTROMAGNETIC WAVES

    PRADEEP|Exercise II Focus multiple choice question|5 Videos

  • ELECTROSTATICS

    PRADEEP|Exercise ASSERTION-REASON TYPE QUESTIONS|2 Videos

Similar Questions

Explore conceptually related problems

Suppose a pure Si crystal has 6xx10^(28) atoms m^(-3) . It is doped by 1ppm concentration of pentavalent As. Calculate the number of electrons and holes, Given that n_(i)=0.5xx10^(16)m^(-3)

Suppose a pure Si crystal has 5 xx 10^(28) atoms per m^(3) It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and hole Given that n_(1) = 1.2 xx 10^(16) for m^(3) .

Knowledge Check

  • A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) Ratio of conductivity of doped silicon and pure silicon semiconductor is

    A
    `2.2xx10^(6)`
    B
    `3.3xx10^(6)`
    C
    `2.2xx10^(8)`
    D
    `3.3xx10^(8)`

  • A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) The conductivity of doped semiconductor (in Sm^(-1)) is

    A
    `2xx10^(3)`
    B
    `3xx10^(3)`
    C
    `4xx10^(3)`
    D
    `1xx10^(3)`

  • A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) The number of holes in this semiconductor are

    A
    `5.0xx10^(20)`
    B
    `4.54xx10^(13)`
    C
    `4.54xx10^(9)`
    D
    `4.54xx10^(2)`

    • Similar Questions

    Explore conceptually related problems

    Pure Si crystal at 300 k has 2.5 xx10^(28) atoms m^(-3) it is doped by 1 ppm concentration of pentavalent element As calculate the new concentration of electrons and holes take n_(i) =1.5 xx10^(16) m^(-3)

    The number of silicon atoms per m^(3) is 5xx10^(28) . This is doped simultaneously with 5xx10^(22) atoms per m^(3) of Arsenic and 5xx10^(20) per m^(3) atoms of indium. Calculate the number of electrons and holes. Given that n_(i)=1.5xx10^(16)m^(-3) . Is the material n-type or p-type?

    The number of silicon atoms per m^(3) is 5 xx 10^(28) . This is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of Arsenic and 5 xx 10^(20) per m^(3) atoms of Indium. Calculate the number of electrons and holes. Given that n_(i) = 1.5 xx 10^(16) m^(-3) . ls the material n-type or p-type?

    Suppose a 'n'- type wafer is created by doping Si crystal having 5xx10^(28) "atoms"//m^(3) with 1 ppm concentration of As. On the surfabe 200 ppm Boron is added to create 'p' region in this wafer. Considering n_(i)=1.5xx10^(16)m^(-3) , (i) Calculate the densities of the charge carriers in the n & p regions. (ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.

    Calculate the gyro magnetic ratio of electron (given 1.6 xx10^(-19) C, m_r=9.1xx10^(-3) kg )

    Home
    Profile