Predict effect on the electrical properties of a silicon crystal at room temperature if every millionth silver atom is replased by an atom of indium. Given, concentration of silicon atoms `=5xx10^(28) m^(-3)`, Intrinsic carrier concentration `=1.5xx10^(16) m^(-3), mue=0.135 m^(2)//Vs and mu_(h)=0.048m^(2)//Vs`.

Explanation

To solve the problem, we need to analyze the effect of doping a silicon crystal with indium atoms, where every millionth silver atom is replaced by an indium atom. The key steps involve calculating the hole concentration, electron concentration, conductivity, and resistivity of the doped silicon crystal.

### Step-by-Step Solution:

1. **Determine the concentration of silicon atoms**:
\[ N_{Si} = 5 \times 10^{28} \, \text{m}^{-3} \]
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