Home
Class 12
PHYSICS
The energy gap between conductionband an...

The energy gap between conductionband and valence band is of the order of 0.07 eV. It is a/an

A

insulator

B

conductor

C

semiconductor

D

alloy

Text Solution

Verified by Experts

The correct Answer is:
B

The energy gap between conduction band and valency band is 0.07 eV, which is very small. Therefore, the electrons can go very easily from valence band to conduction band after gaining a little energy. Hence the material is a conductor.
Promotional Banner

Topper's Solved these Questions

  • ELECTRONIC DEVICES

    PRADEEP|Exercise LONG QUESTION ANSWER|2 Videos
  • ELECTRONIC DEVICES

    PRADEEP|Exercise PROBLEMS FOR PRACTICE|7 Videos
  • ELECTRONIC DEVICES

    PRADEEP|Exercise HIGHER ORDER THINKING SKILLS|1 Videos
  • ELECTROMAGNETIC WAVES

    PRADEEP|Exercise II Focus multiple choice question|5 Videos
  • ELECTROSTATICS

    PRADEEP|Exercise ASSERTION-REASON TYPE QUESTIONS|2 Videos

Similar Questions

Explore conceptually related problems

In an semiconductor the separation between conduction band and valence band is of the order of

There is a small energy gap between the conduction and valence bands of

There is a small energy gap between the conduction and valence bands of

Statement-1 : When the temperature of a semiconductor is increased, then its resistance decreases. Statement-2 : The energy gap between conduction band and valence band is very small for semiconductor.

In an insulator, the forbidden energy gap between the valence band and conduction band is of the order of

Assertion: If the temperature of a semiconductor is increased then its resistance decreases. Reason: The energy gap between conduction band and valence band is very small

Band gap in insulator is of the order

PRADEEP-ELECTRONIC DEVICES-Exercise
  1. If the ratio of the concentration of electron to that of holes in a se...

    Text Solution

    |

  2. C and Si both have same lattice structure, having 4 bonding electrons ...

    Text Solution

    |

  3. The energy gap between conductionband and valence band is of the order...

    Text Solution

    |

  4. A semiconductor is known to have an electron concentric of 8xx10^(13)/...

    Text Solution

    |

  5. A Ge specimen is dopped with Al. The concentration of acceptor atoms i...

    Text Solution

    |

  6. Pure Si at 500K has equal number of electron (n(e)) and hole (n(h)) co...

    Text Solution

    |

  7. Mobility of electron and holes in a sample of intristic germanium at r...

    Text Solution

    |

  8. In n-type semiconductor when when all donor states are filled, then th...

    Text Solution

    |

  9. In a semiconductor material (1//5)th of the total current is carried b...

    Text Solution

    |

  10. The number density of free electrons in the semiconductor is 10^(18)m^...

    Text Solution

    |

  11. A semiconductor having electron and linear mobilities mu(n) and mu(p) ...

    Text Solution

    |

  12. Identify the semiconductor device where characteristics are given belo...

    Text Solution

    |

  13. If a p-n junction diode, a square input signal of 10 V is applied as s...

    Text Solution

    |

  14. The dominant mechanisms for motion of charge carriers in forward and r...

    Text Solution

    |

  15. The circuit shown in figure (1) Contains two diodes each with a forwar...

    Text Solution

    |

  16. Which one of the following represents forward bias diode?

    Text Solution

    |

  17. A sinusiodal voltage of rms value 200 volt is connected to the diode a...

    Text Solution

    |

  18. In the given figure, a diode D is connected to an external resistance ...

    Text Solution

    |

  19. A diode having potential difference 0.5 V across its junction which do...

    Text Solution

    |

  20. A zener diode, having breakdown voltage equal to 15 V is used in a vol...

    Text Solution

    |