Home
Class 12
PHYSICS
The diode shown in the circuit is a sili...

The diode shown in the circuit is a silicon diode. The potential difference between the points `A` and `B` will be

A

6V

B

0.6V

C

0.7V

D

zero

Text Solution

Verified by Experts

The correct Answer is:
A
Here, diode is reverse biased, hence offer infinite resistance. Due to it, no current flows i.e. p-n junction acts as an open circuit in reverse biasing. The potential at `A` is equal to potential of negative electrode of `6 V` battery and potential of negative electrode of `6 V` battery and potential at `B` is equal to potential of positive electrode of `6V` battery. Thus pot. diff. between `A` and `B` is `6 V`.
Promotional Banner

Topper's Solved these Questions

  • ELECTRONIC DEVICES

    PRADEEP|Exercise LONG QUESTION ANSWER|2 Videos

  • ELECTRONIC DEVICES

    PRADEEP|Exercise PROBLEMS FOR PRACTICE|7 Videos

  • ELECTRONIC DEVICES

    PRADEEP|Exercise HIGHER ORDER THINKING SKILLS|1 Videos

  • ELECTROMAGNETIC WAVES

    PRADEEP|Exercise II Focus multiple choice question|5 Videos

  • ELECTROSTATICS

    PRADEEP|Exercise ASSERTION-REASON TYPE QUESTIONS|2 Videos

Similar Questions

Explore conceptually related problems

The potential difference between the points A and B in the given circuit is

In the given circuit, the potential difference between the points A and B is

In the circuit shown in figure-3.331, the potential difference between points A and Bis :

In given circuit , the potential difference between points A and B is

Potential difference between the points B and E of the circuit is -

In the circuit shown in figure potential difference between the points A and B in the steady state is

What is the potential difference between points A and B in the circuit shown?

In the circuit shown, the potential difference between A and B is:

For the circuit in find the potential difference between points a and b.

Find the potential difference (inV) between points A and B shown in the circuit.

PRADEEP-ELECTRONIC DEVICES-Exercise
  1. The equivalent resistance of the circuit across AB is given by .

    Text Solution

    |

  2. A p-n junction has acceptor impurity concentration of 10^(17) cm^(-3) ...

    Text Solution

    |

  3. The diode shown in the circuit is a silicon diode. The potential diffe...

    Text Solution

    |

  4. In the circuit Fig., what is the range over which the load resistance ...

    Text Solution

    |

  5. Two Zener diodes having specification 12V, 1/4W are connected in serie...

    Text Solution

    |

  6. The graph shown in Fig. represents the I-V characteristics of a zener ...

    Text Solution

    |

  7. The width of depletion region in p-n junction diode is 500 nm and an i...

    Text Solution

    |

  8. Two junction diodes, one of germanium (Ge) and other of silicon (Si) ...

    Text Solution

    |

  9. The forward biased diode connection is

    Text Solution

    |

  10. In the circuit, Fig.he current through the zener diode is

    Text Solution

    |

  11. The I-V characteristic of an LED is.

    Text Solution

    |

  12. The currect voltage relation of a diode is given by 1 = (e^(van v//T)...

    Text Solution

    |

  13. The given graph represents V-I characteristic for a semiconductor devi...

    Text Solution

    |

  14. For a common emiter configuration if a and beta have their usualy mean...

    Text Solution

    |

  15. The input signal given to a CE amplifier having a voltage gain of 150 ...

    Text Solution

    |

  16. The current transfer ratio beta of a transistor is 50. The input resis...

    Text Solution

    |

  17. A transistor is used in common emitter mode as an amplifier. Then (1...

    Text Solution

    |

  18. For a transistor amplifier, the voltage gain

    Text Solution

    |

  19. In the following common emitter configuration an NPN transistor with c...

    Text Solution

    |

  20. A CE amplifier has a voltage gain 50, an input impedance of 1000 ohm, ...

    Text Solution

    |