Home
Class 12
PHYSICS
In p-n junction diode, near junction hol...

In p-n junction diode, near junction holes combine with electrons, and impurity ions form a barrier potential which opposes the recombination of electron-hole pairs. Value of barriers potential for Si is 0.7 volt and for Ge is 0.3 V. thus charge density at the junction becomes zero and an electric field is produced near junction. this region is called depletion layer. Thickness of depletion layer is of the order of `10^(-6)` meter. in forward bias p terminal is connected with the positive terminal of cell and n is connected with negative terminal of cell and n is connected with negative terminal of cell. as forward voltage is increased, current increases exponentially.
As forward voltage is increased barrier potential in p-n junction diode is

A

Increased

B

Decreased

C

Remains same

D

nothing can be said

Text Solution

Verified by Experts

The correct Answer is:
B
Doubtnut Promotions Banner Mobile Dark
|

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS

    AAKASH INSTITUTE|Exercise Assignment (Section-D (Assertion and reason))|5 Videos

  • SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS

    AAKASH INSTITUTE|Exercise Assignment (Section -B (Objective type question (one option is correct))|29 Videos

  • SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )

    AAKASH INSTITUTE|Exercise Assignment SECTION - D (Assertion & reason type Question)|10 Videos

  • SYSTEM OF PARTICLES AND ROTATIONAL MOTION

    AAKASH INSTITUTE|Exercise Try Yourself|63 Videos

Similar Questions

Explore conceptually related problems

How is a potential barrier formed in p-n junction diode ?

The barrier potential in a P-N junction is maximum in

Knowledge Check

  • In p-n junction diode, near junction holes combine with electrons, and impurity ions form a barrier potential which opposes the recombination of electron-hole pairs. Value of barriers potential for Si is 0.7 volt and for Ge is 0.3 V. thus charge density at the junction becomes zero and an electric field is produced near junction. this region is called depletion layer. Thickness of depletion layer is of the order of 10^(-6) meter. in forward bias p terminal is connected with the positive terminal of cell and n is connected with negative terminal of cell and n is connected with negative terminal of cell. as forward voltage is increased, current increases exponentially. For Si diode minimum required forward voltage so that current can flow is

    A
    0.3V
    B
    1.4V
    C
    0.7V
    D
    zero

  • In p-n junction diode, near junction holes combine with electrons, and impurity ions form a barrier potential which opposes the recombination of electron-hole pairs. Value of barriers potential for Si is 0.7 volt and for Ge is 0.3 V. thus charge density at the junction becomes zero and an electric field is produced near junction. this region is called depletion layer. Thickness of depletion layer is of the order of 10^(-6) meter. in forward bias p terminal is connected with the positive terminal of cell and n is connected with negative terminal of cell and n is connected with negative terminal of cell. as forward voltage is increased, current increases exponentially. Correct graph for variation of charge density with distance from the junction is

    A
    B
    C
    D

  • A p-n junction has a depletion layer thickness of the order of

    A
    `10^(-10) m`
    B
    `10^(-8) m`
    C
    `10^(-6) m`
    D
    `10^(-4) m`

    • Similar Questions

    Explore conceptually related problems

    In forward bias, the width of potential barrier in a p-n junction diode

    The depletion region of p-n junction has a thickness of the order of

    The depletion region of p-n junction has a thickness of the order of

    The depletion region of PN junction has a thickness of the order of

    In a P-N junction diode is P region is heavily doped than n region then the depletion layer is

    Home
    Profile