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In a PN -junction diode...

In a `PN` -junction diode

A

The current in the reverse biased condition is generally very small

B

The current in the reverse biased condition is small but the forwards biased current is independent of the biase voltage

C

The reverse biased current is srongly dependent on the applied biase voltage.

D

The forward biased current is very small in comparision to reverse biased current.

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To analyze the behavior of a PN-junction diode under forward and reverse bias conditions, we can break down the explanation into clear steps: ### Step-by-Step Solution: 1. **Understanding the PN-Junction Diode**: - A PN-junction diode consists of two types of semiconductor materials: p-type (which has an abundance of holes) and n-type (which has an abundance of electrons). The junction between these two materials is where the behavior of the diode is defined. 2. **Formation of the Depletion Layer**: - When the p-type and n-type materials are joined, electrons from the n-side recombine with holes from the p-side, creating a depletion region. This region is devoid of charge carriers and acts as an insulator. 3. **Forward Bias Condition**: - In forward bias, the positive terminal of the battery is connected to the p-side and the negative terminal to the n-side. This reduces the potential barrier at the junction. - As a result, holes from the p-side and electrons from the n-side are pushed towards the junction, allowing current to flow. The depletion layer width decreases, and the current increases significantly after a certain threshold voltage (the forward voltage drop). 4. **Reverse Bias Condition**: - In reverse bias, the positive terminal of the battery is connected to the n-side and the negative terminal to the p-side. This increases the potential barrier at the junction. - The depletion layer widens, and very few charge carriers can cross the junction, resulting in a very small reverse current. This current remains low until a breakdown voltage is reached, at which point the diode can conduct a large current. 5. **Current Characteristics**: - In forward bias, the current increases with applied voltage after the threshold is reached. - In reverse bias, the current is typically very small until breakdown occurs, at which point it can increase dramatically. 6. **Conclusion**: - The behavior of the PN-junction diode under forward and reverse bias conditions shows that the current in reverse bias is generally very small due to the increased resistance from the widened depletion layer. ### Summary: - **Forward Bias**: Current flows easily after a threshold voltage due to reduced resistance. - **Reverse Bias**: Current is very small until breakdown voltage is reached due to increased resistance.

To analyze the behavior of a PN-junction diode under forward and reverse bias conditions, we can break down the explanation into clear steps: ### Step-by-Step Solution: 1. **Understanding the PN-Junction Diode**: - A PN-junction diode consists of two types of semiconductor materials: p-type (which has an abundance of holes) and n-type (which has an abundance of electrons). The junction between these two materials is where the behavior of the diode is defined. 2. **Formation of the Depletion Layer**: ...
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