If a semiconductor has an intrinsic carrier concentration of `1.41 xx 10^(16)//m^(3)` when doped with `10^(21)//m^(3)` at room temperature will be

A semiconductor has an intrinsic carrier concentration of 1.41 xx 10^(16) m^-3 . When doped with 10^(21) m^-3 phosphorus, the concentration of holes at room temperature is n xx 10^(11) / m^3 . Find n .

A crystal of intrinsic silicon at room temperature has a carrier concentration of 1.6 xx 10^(6)//m^(3) . If the donor concentration level is 4.8 xx 10^(20)//m^(3) , then the concentration of holes in the semiconductor is

A crystal of intrinsic silicon at room temperature has a carrier concentration of 1.6xx10^(16)m^(-3) . If the donor concentration level is 4.8xx10^(20) m^(-3) , then the concentration of holes in the semiconductor is