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[" a) "0.25A" .b) "0.5A" c) "0.75A" .Are...

[" a) "0.25A" .b) "0.5A" c) "0.75A" .Arear "],[" 6) Pure Si at "500K" has an equal number of electron "(n_(e))],[" and hole "(n_(h))" concentrations to "1.5times10^(16)m^(-3)" .Doping "],[" by indium increases "n_(h)" to "4.5times10^(22)m^(-3)" .The doped "],[" semiconductor is of "],[" b) n-type having electron concentration "n_(e)=5times10^(22)],[" c) p-type with electron concentration "n_(e)=2.5times10^(10)],[" (1) "n^(-3)" ."],[" d) n-type with electron concentration "n_(e)=2.5times10^(23)]

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Pure Si at 500 K has equal number of electron (n_(e )) and hole (n_(h)) concentrations of 1.5xx10^(16)m^(-3) . Doping by indium increases n_(h) to 4.5xx10^(22)m^(-3) . The doped semiconductor is of ………

Pure Si at 500 K has equal number of electron ( n_(e)) and hole ( n_(h)) concentrations of 1.5 xx10^(16) "m"^(-3) . Doping by indium increases n_(h) to 4.5 xx10^(22) "m" ^(-3) . The doped semiconductor is of

Pure Si at 500K has equal number of electron (n_(e)) and hole (n_(h)) concentration of 1.5xx10^(16)m^(-3) . Dopping by indium. Increases n_(h) to 4.5xx10^(22) m^(-3) . The doped semiconductor is of

Pure Si at 500K has equal number of electron (n_(e)) and hole (n_(h)) concentration of 1.5xx10^(16)m^(-3) . Dopping by indium. Increases n_(h) to 4.5xx10^(22) m^(-3) . The doped semiconductor is of

Pure Si at 300 K has equal electron (n_(e)) and hole (n_(h)) concentration of 1.5xx10^(16) m^(-3) . Doping by indium increases n_(h) to 4.5xx10^(22)m^(-3) . Calculate n_(e) in the doped silicon.

Pure Si at 300 K has equal electron (n_(e)) and hole (n_(h)) concentrations of 1.5xx10^(16)m^(-3) doping by indium increases n_(h) to 4.5xx10^(22)m^(-3) . Caculate n_(e) in the doped Si-

Pure Si at 300 K has equal electron (n_(e)) and hole (n_(h)) concentrastions of 1.5xx10^(16)m^(-3) doping by indium increases n_(h) to 4.5xx10^(22)m^(-3) . Caculate n_(theta) in the doped Si-