A photodetector is made from a compound semiconductor with band gap 0.73eV. The maximum wavelength it can detect is

A p - n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Which of the following wavelengths it can detect?

A photodiode is fabricated from a semiconductor with band gap of 2.8 eV . Can it detect a wavelength of 6000 nm ?

Ap-n photodiode is fabricated from a semiconductor with band gap of 2.8eV. Can it detect a wavelength of 6000 nm?

A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV . Can it detect a wavelength of 6000nm ?

A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Can it detect a wavelength of 6000 nm?

A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV can it detect a wavelength of 6000 nm