In an intrinsic semiconductor the energy gap `E_(g)` is 1.2eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600K and that at 300K? Assume that the temperature dependence of intrinsic carrier concentration `n_(i)` is given by
`n_(i)=n_(o)exp(-(E_(g))/(2K_(B)T))`
where `n_(0)` is a constant.

In an intrinsic semiconductor the energy gap E_(g) is 1.2 eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600 K and that at 300 K? Assume that the temerature dependence of intrinsic carrier concentration n_(i) is given by n_(i)=n_(0)"exp"(-(E_(g))/(2k_(B)T)) where n_(0) is a constant.

In an intrinsic semiconductor , the energy gap E_(g) is 1.2 eV . Its hole mobility is much smaller than electron mobility and independent of temperature . What is the ratio between conductivity of 600 K and that at 300 K ? Assume that the temperature dependence of intrinsic carrier concentration n_i is given by n_(i)=n_(0) exp ((-E_(g))/(k_T)), where n_(0) is a constant and k_=8.62xx10^(-5)eV//K.

In an intrinsic semiconductor the energy gap E_g is 1.2eV . Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600K and that at 300K? Assume that the temperature dependence of intrinsic carrier concentration ni is given by n_i= n_0 exp((E_g)/(2k_BT)) where n_0 is constant.

In an intrinsic semiconductor the energy gap E_(g) is 1.2 eV . Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600K and 300K ? Assume that temperature dependence intristic concentration n_(i) is given by n_(i)=n_(0) exp ((-E_(g))/(2k_T)) , where n_(0) is a constant and k_=8.62xx10^(-5)eV//K .

In an intrinsic semiconductor the energy gap E_(g) is 1.2 eV . Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600K and 300K ? Assume that temperature dependence intrinstic concentration n_(i) is given by n_(i)=n_(0) exp ((-E_(g))/(2k_T)) , where n_(0) is a constant and k_=8.62xx10^(-5)eV//K .

In an intrinsic semiconductor, the energy gap E_(g) of an intrinsic semiconductor is 1.2 eV. Its hole mobility is very much smaller than electron mobility and is indepndent of temperature. What is the ratio between conductivity at 600K and at 300K? Assume that the temperature dependence of intrinsic concentraction n_(i) is expressed as, n_(i)=n_(o)e^(-E_(g)^(')//k_B)T , where n_(o) is constant and E_(g)^(') is an energy equal to E_(g)//2 , k_(B)=8.62xx10^(-6)eVK^(-1) .

The energy gap of pure Si is 1.1 eV The mobilities of electrons and holes are respectively 0.135 m^(2) V^(-1) s^(-1) and 0.048 m^(2) V^(-1) s^(-1) and can be taken as independent of temperature. The intrinsic carrier concentration is given by n_(i) = n_(0) e^(-Eg//2kT) . Where n_(0) is a constant, E_(g) The gap width and k The Boltmann's constant whose vaue is 1.38 xx 10^(-23) JK^(-1) The ratio of the electrical conductivities of Si at 600 K and 300 K is.

A semiconductor having electron and linear mobilities mu_(n) and mu_(p) respectively. If its intrinsic carrier density is n_(i) , then what will be the value of hole concentration P for which the conductivity will be maximum at a given temperature?

A semiconductor having electron and linear mobilities mu_(n) and mu_(p) respectively. If its intrinsic carrier density is n_(i) , then what will be the value of hole concentration P for which the conductivity will be maximum at a given temperature?