The breakdown in a reverse biased p-n junction diode is more likely to occur due to

Options

A. (a) large velocity of the minority charge carries if the doping concentration is small
B. (b) large velocity of the minority charge carries if the doping concentration is large
C. (c ) strong electric field in a depletion region if the doping concentration is small
D. (d ) strong electric field in a depletion region if the doping concentration is large.

Answer

A, D

Explanation

Reverse breakdown may be " A vlanche break down " ( breakdown due to highly velocity collision of minority carrier) or it may be a zener breakdown (breakdown of bonds due to strong field).