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A semiconductor having electron and line...

A semiconductor having electron and linear mobilities `mu_(n)` and `mu_(p)` respectively.
If its intrinsic carrier density is `n_(i)`, then what will be the value of hole concentration `P` for which the conductivity will be maximum at a given temperature?

A

`n_("i")sqrt((mu_(n))/(mu_(p)))`

B

`n_(h)sqrt((mu_(n))/(mu_(p)))`

C

`n_("i")sqrt((mu_(p))/(mu_(p)))`

D

`n_(h)sqrt((mu_(p))/(mu_(n)))`

Text Solution

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The correct Answer is:
A
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