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A P-N photodiode is fabricated from a se...

A P-N photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength :-

A

`6000Å`

B

4000nm

C

6000nm

D

5000Å

Text Solution

Verified by Experts

The correct Answer is:
D
Photodiode detect singnal when `(hc ) /( lamda ) ge Delta Eg `
` '(h c) /(Delta Eg ) =(12400 ) /( 2.5) 4960 Å`
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A p-n photodiode is fabricate from a semiconductor with a band gap of 2.5eV . It can detect a singal of wavelength

A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV can it detect a wavelength of 6000 nm

(a). Explains briefly with the help of a circuit diagram how V-I characteristics of a p-n junction diode are obtainedin (i) forward bias, and (ii) reverse bias. (b). A photo diode is fabricated from a semiconductor with a band gap of 2.8 EV. Can it detect wave length of 6000. nm? Justify.

A p - n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Which of the following wavelengths it can detect?

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