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If N(P) and N(e) be the numbers of holes...

If `N_(P)` and `N_(e)` be the numbers of holes and conduction electrons in an extrinsic semiconductor, then

A

`N_(p) gt N_(e)`

B

`N_(p)=N_(e)`

C

`N_(p) lt N_(e)`

D

`N_(p) gt N_(e) or N_(p) lt N_(e)` depending on the nature of impurity

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Verified by Experts

The correct Answer is:
D
In an extrinsic semiconductor, if doping is done by using a pentavalent impurity, then number of electrons is more than number of holes and if a trivalent impurity is used then number of holes is more than number of electrons.
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MHTCET PREVIOUS YEAR PAPERS AND PRACTICE PAPERS-SEMICONDUCTORS-Exercise 1 ( TOPICAL PROBLEMS )
  1. Gas is-

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  2. There is no hole current in conductors because they have

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  3. If N(P) and N(e) be the numbers of holes and conduction electrons in a...

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  4. An n-type and p-type silicon can be obtained by doping pure silicon wi...

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  5. In an insulator, the forbidden energy gap between the valence band and...

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  6. Correct one is

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  7. Forbidden energy gap in a semiconductor is

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  8. In its crystalline structure, every Si or Ge atoms are attached to oth...

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  9. Let n(p) and n(e) be the number of holes and conduction electrons res...

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  10. At elevated temperature, few of covalent bonds of Si or Ge are broken ...

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  11. Carbon, silicon and germanium atoms have four valence electrons each. ...

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  12. A intrinsic semiconductor at a absolute zero of temperature behaves as

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  13. Would there be any advantage to adding n-type or p-type impurities to ...

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  14. The temperature of germanium is decreased from room temperature to 100...

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  15. The contribution in the total current flowing through a semiconductor ...

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  16. Which one of the following statements is false ?

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  17. The forward biased diode connection is

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  18. Reverse bias applied to a junction diode

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  19. In a reverse biased p-n junction, when the applied bias voltages is eq...

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  20. In a p- n junction diode not connected to any circuit,

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