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An n-type and p-type silicon can be obta...

An n-type and p-type silicon can be obtained by doping pure silicon with.

A

arsenic and phosphorous respectively

B

indium and aluminium respectively

C

phosphorus and indium respectively

D

aluminium and boron respectively

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Verified by Experts

The correct Answer is:
C

To form an n-type semiconductor doping is done by using a pentavalent impurity, like phosphorous and to form a p-type semiconductor doping is done by using a trivalent impurity like indium.
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MHTCET PREVIOUS YEAR PAPERS AND PRACTICE PAPERS-SEMICONDUCTORS-Exercise 1 ( TOPICAL PROBLEMS )
  1. There is no hole current in conductors because they have

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  2. If N(P) and N(e) be the numbers of holes and conduction electrons in a...

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  3. An n-type and p-type silicon can be obtained by doping pure silicon wi...

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  4. In an insulator, the forbidden energy gap between the valence band and...

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  5. Correct one is

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  6. Forbidden energy gap in a semiconductor is

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  7. In its crystalline structure, every Si or Ge atoms are attached to oth...

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  8. Let n(p) and n(e) be the number of holes and conduction electrons res...

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  9. At elevated temperature, few of covalent bonds of Si or Ge are broken ...

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  10. Carbon, silicon and germanium atoms have four valence electrons each. ...

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  11. A intrinsic semiconductor at a absolute zero of temperature behaves as

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  12. Would there be any advantage to adding n-type or p-type impurities to ...

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  13. The temperature of germanium is decreased from room temperature to 100...

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  14. The contribution in the total current flowing through a semiconductor ...

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  15. Which one of the following statements is false ?

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  16. The forward biased diode connection is

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  17. Reverse bias applied to a junction diode

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  18. In a reverse biased p-n junction, when the applied bias voltages is eq...

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  19. In a p- n junction diode not connected to any circuit,

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  20. When LED is forward biased, then

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