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Forbidden energy gap in a semiconductor ...

Forbidden energy gap in a semiconductor is

A

1 eV

B

6 eV

C

0 eV

D

3 eV

Text Solution

Verified by Experts

The correct Answer is:
D
For a semiconductor, `0 lt E_(g) le 3eV`
For metals `E_(g)~0` and for insulators `E_(g) gt 3eV`.
forbidden energy gap in semiconductor is maximum energy gap allowed.
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MHTCET PREVIOUS YEAR PAPERS AND PRACTICE PAPERS-SEMICONDUCTORS-Exercise 1 ( TOPICAL PROBLEMS )
  1. In an insulator, the forbidden energy gap between the valence band and...

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  2. Correct one is

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  3. Forbidden energy gap in a semiconductor is

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  4. In its crystalline structure, every Si or Ge atoms are attached to oth...

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  5. Let n(p) and n(e) be the number of holes and conduction electrons res...

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  6. At elevated temperature, few of covalent bonds of Si or Ge are broken ...

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  7. Carbon, silicon and germanium atoms have four valence electrons each. ...

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  8. A intrinsic semiconductor at a absolute zero of temperature behaves as

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  9. Would there be any advantage to adding n-type or p-type impurities to ...

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  10. The temperature of germanium is decreased from room temperature to 100...

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  11. The contribution in the total current flowing through a semiconductor ...

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  12. Which one of the following statements is false ?

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  13. The forward biased diode connection is

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  14. Reverse bias applied to a junction diode

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  15. In a reverse biased p-n junction, when the applied bias voltages is eq...

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  16. In a p- n junction diode not connected to any circuit,

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  17. When LED is forward biased, then

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  18. A full wave rectifier uses two diodes with a load resistance of 100 Om...

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  19. In forward biasing of the p-n junction:

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  20. In a P-N junction diode :

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