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Carbon, silicon and germanium atoms have...

Carbon, silicon and germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented by `(E_(g))_(C),(E_(g))_(Si)` and `(E_(g))_(Ge)`, respectively. Which one of the following relationship is true in their case?

A

`E_(g) (Si) lt E_(g) (Ge) lt E_(g)(C )`

B

`E_(g) (Si) gt E_(g) (Ge) lt E_(g)(C )`

C

`E_(g) (Si) lt E_(g)(Ge) lt E_(g)(C )`

D

`E_(g) (Si) gt E_(g) (Ge) gt E_(g)(C )`

Text Solution

Verified by Experts

The correct Answer is:
B

`E_(g)(Si) gt E_(g) (Ge) lt E_(g)(C )`
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MHTCET PREVIOUS YEAR PAPERS AND PRACTICE PAPERS-SEMICONDUCTORS-Exercise 1 ( TOPICAL PROBLEMS )
  1. Let n(p) and n(e) be the number of holes and conduction electrons res...

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  2. At elevated temperature, few of covalent bonds of Si or Ge are broken ...

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  3. Carbon, silicon and germanium atoms have four valence electrons each. ...

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  4. A intrinsic semiconductor at a absolute zero of temperature behaves as

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  5. Would there be any advantage to adding n-type or p-type impurities to ...

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  6. The temperature of germanium is decreased from room temperature to 100...

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  7. The contribution in the total current flowing through a semiconductor ...

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  8. Which one of the following statements is false ?

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  9. The forward biased diode connection is

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  10. Reverse bias applied to a junction diode

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  11. In a reverse biased p-n junction, when the applied bias voltages is eq...

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  12. In a p- n junction diode not connected to any circuit,

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  13. When LED is forward biased, then

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  14. A full wave rectifier uses two diodes with a load resistance of 100 Om...

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  15. In forward biasing of the p-n junction:

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  16. In a P-N junction diode :

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  17. In the middle of the depletion layer of a reverse - biased p - n junc...

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  18. In a semi conductor diode , the barrier potential offers opposition to...

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  19. For germenium crystal, the forbidden energy gap in joules is

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  20. A 220 V AC supply is connected between points A and B. What will...

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