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Which one of the following statements is...

Which one of the following statements is false ?

A

Pure Si doped with trivalent impurities gives a p-type semiconductor

B

Majority carriers in a n-type semiconductor are holes

C

Minority carriers in a p-type semiconductor are electrons

D

The resistance of intrinsic semiconductor decreases with increase of temperature

Text Solution

Verified by Experts

The correct Answer is:
B

p-type semiconductor are obtained by adding a small amount of trivalent impurity to a pure sample of semiconductor (Ge).
Majority charge carriers-holes
Minority charge carriers-electrons
n-type semiconductor are obtained by adding a small amount of pentavalent impurity to a pure sample of semiconductor (Ge).
Majority charge carriers-electrons
The resistance of intrinsic semiconductors decreases with increase of temperature.
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MHTCET PREVIOUS YEAR PAPERS AND PRACTICE PAPERS-SEMICONDUCTORS-Exercise 1 ( TOPICAL PROBLEMS )
  1. The temperature of germanium is decreased from room temperature to 100...

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  2. The contribution in the total current flowing through a semiconductor ...

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  3. Which one of the following statements is false ?

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  4. The forward biased diode connection is

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  5. Reverse bias applied to a junction diode

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  6. In a reverse biased p-n junction, when the applied bias voltages is eq...

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  7. In a p- n junction diode not connected to any circuit,

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  8. When LED is forward biased, then

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  9. A full wave rectifier uses two diodes with a load resistance of 100 Om...

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  10. In forward biasing of the p-n junction:

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  11. In a P-N junction diode :

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  12. In the middle of the depletion layer of a reverse - biased p - n junc...

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  13. In a semi conductor diode , the barrier potential offers opposition to...

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  14. For germenium crystal, the forbidden energy gap in joules is

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  15. A 220 V AC supply is connected between points A and B. What will...

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  16. If an alternating voltage is applied across a diode in series with a l...

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  17. In half - wave rectification, what is the output frequency, if the inp...

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  18. The p-n junction which generates an emf when solar radiation falls on ...

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  19. Avalanche breakdown in a PN junction diode is to

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  20. If in a p-n junction diode , a square input single of 10 V is applied...

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