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The p-n junction which generates an emf ...

The p-n junction which generates an emf when solar radiation falls on it, with no external bias applied, is a

A

light emitting diode

B

photodiode

C

solar cell

D

zener diode

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The correct Answer is:
B
The p-n junction which generates an emf when solar radiation falls on it, with no external bias applied is a photodiode.
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MHTCET PREVIOUS YEAR PAPERS AND PRACTICE PAPERS-SEMICONDUCTORS-Exercise 1 ( TOPICAL PROBLEMS )
  1. If an alternating voltage is applied across a diode in series with a l...

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  2. In half - wave rectification, what is the output frequency, if the inp...

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  3. The p-n junction which generates an emf when solar radiation falls on ...

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  4. Avalanche breakdown in a PN junction diode is to

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  5. If in a p-n junction diode , a square input single of 10 V is applied...

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  6. Pure Si at 300 K has equal electron (n(e)) and hole (n(h)) concentrati...

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  7. In an unbiased p-n junction,

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  8. The difference in the variation of resistance with temperature in a me...

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  9. In semiconductor the concentrations of electron and holes are 8xx10^(1...

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  10. A light emitting diode (LED) has a voltage drop of 2V across it and pa...

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  11. Rectifier converts

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  12. The probability of electrons to be found in the conduction band of an ...

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  13. A transistor is operated in common emitter configuration at V(c)=2 V s...

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  14. An n-p-n transistor can be considered to be equivalent to two diodes, ...

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  15. The transfer characteristics of a base biased transistor has the opera...

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  16. For a transistor the parameter beta=99. The value of the parameter alp...

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  17. The current gain in the common emitter mode of a transistor is 10. The...

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  18. If beta, R(L) and r are the AC current gain, load resistance and the i...

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  19. In a common base configuration (transistor circuit) I(E)=1mA, I(C)=0.9...

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  20. In case of NPN-transistor the collector current is always less than th...

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