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In an unbiased p-n junction,...

In an unbiased p-n junction,

A

potential at p is more than that at n

B

potential at p is less than that at n

C

potential at p is equal to that at n

D

potential at p is positive and that at n is negative

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The correct Answer is:
To solve the question regarding the potential difference in an unbiased p-n junction, we will analyze the characteristics of the p-n junction and the behavior of charge carriers. ### Step-by-Step Solution: 1. **Understanding the p-n Junction**: - A p-n junction is formed by joining p-type and n-type semiconductors. The p-type semiconductor has an abundance of holes (positive charge carriers), while the n-type semiconductor has an abundance of electrons (negative charge carriers). 2. **Behavior of Charge Carriers**: - In an unbiased p-n junction (meaning no external voltage is applied), the majority carriers in the p-type (holes) and n-type (electrons) will not move significantly across the junction. However, minority carriers (electrons in p-type and holes in n-type) will diffuse across the junction. 3. **Formation of Depletion Region**: - As the minority carriers diffuse, they recombine with majority carriers, leading to a region near the junction that is depleted of charge carriers. This creates an electric field across the junction. 4. **Potential Difference**: - The electric field established by the separation of charges results in a built-in potential difference across the junction. In this case, the p-side (where holes are majority carriers) will have a higher potential compared to the n-side (where electrons are majority carriers). 5. **Conclusion**: - Therefore, in an unbiased p-n junction, the potential at the p-side is greater than that at the n-side. This means that the potential at p is more than that at n. 6. **Answering the Question**: - Based on the analysis, the correct option is that the potential at p is greater than that at n. ### Final Answer: The potential at p is more than that at n.

To solve the question regarding the potential difference in an unbiased p-n junction, we will analyze the characteristics of the p-n junction and the behavior of charge carriers. ### Step-by-Step Solution: 1. **Understanding the p-n Junction**: - A p-n junction is formed by joining p-type and n-type semiconductors. The p-type semiconductor has an abundance of holes (positive charge carriers), while the n-type semiconductor has an abundance of electrons (negative charge carriers). 2. **Behavior of Charge Carriers**: ...
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In a p-n junction

MHTCET PREVIOUS YEAR PAPERS AND PRACTICE PAPERS-SEMICONDUCTORS-Exercise 1 ( TOPICAL PROBLEMS )
  1. If in a p-n junction diode , a square input single of 10 V is applied...

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  2. Pure Si at 300 K has equal electron (n(e)) and hole (n(h)) concentrati...

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  3. In an unbiased p-n junction,

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  4. The difference in the variation of resistance with temperature in a me...

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  5. In semiconductor the concentrations of electron and holes are 8xx10^(1...

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  6. A light emitting diode (LED) has a voltage drop of 2V across it and pa...

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  7. Rectifier converts

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  8. The probability of electrons to be found in the conduction band of an ...

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  9. A transistor is operated in common emitter configuration at V(c)=2 V s...

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  10. An n-p-n transistor can be considered to be equivalent to two diodes, ...

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  11. The transfer characteristics of a base biased transistor has the opera...

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  12. For a transistor the parameter beta=99. The value of the parameter alp...

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  13. The current gain in the common emitter mode of a transistor is 10. The...

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  14. If beta, R(L) and r are the AC current gain, load resistance and the i...

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  15. In a common base configuration (transistor circuit) I(E)=1mA, I(C)=0.9...

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  16. In case of NPN-transistor the collector current is always less than th...

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  17. The input resistance of a common emitter transistor amplifier, if the ...

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  18. An amplifier has a voltage gain A(v)= 1000. The voltage gain in dB is:

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  19. A p-n-p transistor is said to be in active region of operation, When

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  20. The current of transistor in common emitter mode is 49. The change in ...

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