Home
Class 12
PHYSICS
The difference in the variation of resis...

The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the

A

crystal structure

B

variation of the number of charge carriers with temperature

C

type of bonding

D

variation of scattering mechanism with temperature

Text Solution

Verified by Experts

The correct Answer is:
B
The difference in the variation of resistance with temperature in metal and semiconductor is caused due to difference in the variation of the number of charge carriers with temperature.
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTORS

    MHTCET PREVIOUS YEAR PAPERS AND PRACTICE PAPERS|Exercise Exercise 1 ( MISCELLANEOUS PROBLEMS )|33 Videos

  • SEMICONDUCTORS

    MHTCET PREVIOUS YEAR PAPERS AND PRACTICE PAPERS|Exercise MHT CET Corner|25 Videos

  • SEMICONDUCTORS

    MHTCET PREVIOUS YEAR PAPERS AND PRACTICE PAPERS|Exercise MHT CET Corner|25 Videos

  • SCALARS AND VECTORS

    MHTCET PREVIOUS YEAR PAPERS AND PRACTICE PAPERS|Exercise Exercise 2 (Miscellaneous Problems)|20 Videos

  • STATIONARY WAVES

    MHTCET PREVIOUS YEAR PAPERS AND PRACTICE PAPERS|Exercise MHT CET Corner|28 Videos

Similar Questions

Explore conceptually related problems

The difference in the variation of resistence with temperature in a metel and a semiconductor arises essmially due to the difference in the

Show on a graph, the variation of resistivity with temperature for a typical semiconductor.

Show variation of resistivity of SI with temperature in a graph.

The temperature coefficient of resistance of a semiconductor

On increasing temperature the specific resistance of a semiconductor -

MHTCET PREVIOUS YEAR PAPERS AND PRACTICE PAPERS-SEMICONDUCTORS-Exercise 1 ( TOPICAL PROBLEMS )
  1. Pure Si at 300 K has equal electron (n(e)) and hole (n(h)) concentrati...

    Text Solution

    |

  2. In an unbiased p-n junction,

    Text Solution

    |

  3. The difference in the variation of resistance with temperature in a me...

    Text Solution

    |

  4. In semiconductor the concentrations of electron and holes are 8xx10^(1...

    Text Solution

    |

  5. A light emitting diode (LED) has a voltage drop of 2V across it and pa...

    Text Solution

    |

  6. Rectifier converts

    Text Solution

    |

  7. The probability of electrons to be found in the conduction band of an ...

    Text Solution

    |

  8. A transistor is operated in common emitter configuration at V(c)=2 V s...

    Text Solution

    |

  9. An n-p-n transistor can be considered to be equivalent to two diodes, ...

    Text Solution

    |

  10. The transfer characteristics of a base biased transistor has the opera...

    Text Solution

    |

  11. For a transistor the parameter beta=99. The value of the parameter alp...

    Text Solution

    |

  12. The current gain in the common emitter mode of a transistor is 10. The...

    Text Solution

    |

  13. If beta, R(L) and r are the AC current gain, load resistance and the i...

    Text Solution

    |

  14. In a common base configuration (transistor circuit) I(E)=1mA, I(C)=0.9...

    Text Solution

    |

  15. In case of NPN-transistor the collector current is always less than th...

    Text Solution

    |

  16. The input resistance of a common emitter transistor amplifier, if the ...

    Text Solution

    |

  17. An amplifier has a voltage gain A(v)= 1000. The voltage gain in dB is:

    Text Solution

    |

  18. A p-n-p transistor is said to be in active region of operation, When

    Text Solution

    |

  19. The current of transistor in common emitter mode is 49. The change in ...

    Text Solution

    |

  20. A transistor can be used practically in

    Text Solution

    |