Home
Class 12
PHYSICS
A p-n photodiode is made of a material w...

A `p-n` photodiode is made of a material with a band gap of `2.0 eV`. The minimum frequency of the radiation that can be absorbed by the material is nearly

A

`10xx10^(14)Hz`

B

`5xx10^(14)Hz`

C

`1xx10^(14)Hz`

D

`20xx10^(14)Hz`

Text Solution

Verified by Experts

The correct Answer is:
B

p-n photodiode is a semiconductor diode that produces a significant current when illuminated, it is reversed biased but is operated below the breakdown voltage.
Energy of radiation = band gap energy
i.e. `hv =2.0 eV`
`or v=(2.0xx1.6xx10^(-19))/(6.6xx10^(-34))=5xx10^(14) Hz`
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTORS

    MHTCET PREVIOUS YEAR PAPERS AND PRACTICE PAPERS|Exercise Exercise 1 ( MISCELLANEOUS PROBLEMS )|33 Videos
  • SCALARS AND VECTORS

    MHTCET PREVIOUS YEAR PAPERS AND PRACTICE PAPERS|Exercise Exercise 2 (Miscellaneous Problems)|20 Videos
  • STATIONARY WAVES

    MHTCET PREVIOUS YEAR PAPERS AND PRACTICE PAPERS|Exercise MHT CET Corner|28 Videos

Similar Questions

Explore conceptually related problems

A p-n photodiode is made of a material with a band gap of 2 e V. The minimum frequency of the radiation that can be absorbed by the material is nearly (hc= 1240 eV nm)

A p-n photodiode is fabricate from a semiconductor with a band gap of 2.5eV . It can detect a singal of wavelength

A p - n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Which of the following wavelengths it can detect?

MHTCET PREVIOUS YEAR PAPERS AND PRACTICE PAPERS-SEMICONDUCTORS-MHT CET Corner
  1. In common base circuit of a transistor , current amplification factor ...

    Text Solution

    |

  2. In a n-type semiconductor, which of the following statement is true?

    Text Solution

    |

  3. In a common emitter (CE) amplifier having a voltage gain G, the transi...

    Text Solution

    |

  4. The output (X) of the logic circuit shown in figure will be

    Text Solution

    |

  5. How does the width of the depletion layer of a p-n junction diode chan...

    Text Solution

    |

  6. To use a transistor as an amplifier

    Text Solution

    |

  7. How many NAND gates are required to realise (i) OR gates and (ii) AND ...

    Text Solution

    |

  8. LED is a p-n junction diode which is

    Text Solution

    |

  9. A p-n photodiode is made of a material with a band gap of 2.0 eV. The ...

    Text Solution

    |

  10. In diode, when there is saturation current, the plate resistance (r(p)...

    Text Solution

    |

  11. If a full wave rectifier circuit is operating from 50 Hz mains, the fu...

    Text Solution

    |

  12. The depletion layer in diode is 1 mum wide and the knee potential is 0...

    Text Solution

    |

  13. Which of the following is correct, about doping in a transistor ?

    Text Solution

    |

  14. Freuency of given AC signal is 50 Hz. When it connected to a half - wa...

    Text Solution

    |

  15. In p-type semiconductor, the major charge carriers are:

    Text Solution

    |

  16. To obtain a P-type germanium semiconductor, it must be dopped with

    Text Solution

    |

  17. The process of adding impurities to the pure semiconductor is called

    Text Solution

    |

  18. The depletion layer in P-N junction region is caused by

    Text Solution

    |

  19. In a p-n junction photo cell, the value of the photo electromotive for...

    Text Solution

    |

  20. Semiconductor is damaged by the strong current due to

    Text Solution

    |