Home
Class 12
PHYSICS
Semiconductor is damaged by the strong c...

Semiconductor is damaged by the strong current due to

A

lack of free electron

B

excess of electron

C

excess of proton

D

None of the above

Text Solution

Verified by Experts

The correct Answer is:
D
Breakdown of semiconductor device occurs due to the flow of large current.
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTORS

    MHTCET PREVIOUS YEAR PAPERS AND PRACTICE PAPERS|Exercise Exercise 1 ( MISCELLANEOUS PROBLEMS )|33 Videos

  • SCALARS AND VECTORS

    MHTCET PREVIOUS YEAR PAPERS AND PRACTICE PAPERS|Exercise Exercise 2 (Miscellaneous Problems)|20 Videos

  • STATIONARY WAVES

    MHTCET PREVIOUS YEAR PAPERS AND PRACTICE PAPERS|Exercise MHT CET Corner|28 Videos

Similar Questions

Explore conceptually related problems

Why is the semiconductor damaged by a strong current?

(i) A transistor has a current gain of 30. If the collector resistance is 6 K Omega and input resistance is 1 K Omega , calculate its voltage gain. (ii) Why is a semiconductor damaged by strong current ?

In a semiconductor diode, reserve bias current is due to drift of free electrons and holes caused by

When a battery is connected to a P -type semiconductor with a metallic wire, the current in the semiconductor (predominantly), inside the metallic wire and that inside the battery respectively due to

Through a semiconductor, an electric current is due to drift of

Intrinsic semiconductor is electrically neutral. Extrinsic semiconductor having large number of current carriers would be

when the electrical conductivity of a semiconductor is due to the breaking of its covalent bonds, then the semiconductor is said to be

The electron concentration in an n-type semiconductor is the same as hole concentration in a p-type semiconductor. An external field is applied across each of them. Compare the currents in them.

MHTCET PREVIOUS YEAR PAPERS AND PRACTICE PAPERS-SEMICONDUCTORS-MHT CET Corner
  1. In common base circuit of a transistor , current amplification factor ...

    Text Solution

    |

  2. In a n-type semiconductor, which of the following statement is true?

    Text Solution

    |

  3. In a common emitter (CE) amplifier having a voltage gain G, the transi...

    Text Solution

    |

  4. The output (X) of the logic circuit shown in figure will be

    Text Solution

    |

  5. How does the width of the depletion layer of a p-n junction diode chan...

    Text Solution

    |

  6. To use a transistor as an amplifier

    Text Solution

    |

  7. How many NAND gates are required to realise (i) OR gates and (ii) AND ...

    Text Solution

    |

  8. LED is a p-n junction diode which is

    Text Solution

    |

  9. A p-n photodiode is made of a material with a band gap of 2.0 eV. The ...

    Text Solution

    |

  10. In diode, when there is saturation current, the plate resistance (r(p)...

    Text Solution

    |

  11. If a full wave rectifier circuit is operating from 50 Hz mains, the fu...

    Text Solution

    |

  12. The depletion layer in diode is 1 mum wide and the knee potential is 0...

    Text Solution

    |

  13. Which of the following is correct, about doping in a transistor ?

    Text Solution

    |

  14. Freuency of given AC signal is 50 Hz. When it connected to a half - wa...

    Text Solution

    |

  15. In p-type semiconductor, the major charge carriers are:

    Text Solution

    |

  16. To obtain a P-type germanium semiconductor, it must be dopped with

    Text Solution

    |

  17. The process of adding impurities to the pure semiconductor is called

    Text Solution

    |

  18. The depletion layer in P-N junction region is caused by

    Text Solution

    |

  19. In a p-n junction photo cell, the value of the photo electromotive for...

    Text Solution

    |

  20. Semiconductor is damaged by the strong current due to

    Text Solution

    |