In a `P-N` junction diode is `P` region is heavily doped than `n` region then the depletion layer is

Options

A. decreased with heavy doping
B. increased by reverse biasing
C. decreased with light doping
D. increased by forward biasing

Answer

B

Explanation

In case of p - n junction diose, when it is reverse biased, the reverse voltage supports the barrir potential and hence the width of the depltion layer increases .
In forward baising, the width decreases as the forward voltahe opposes the potential barrier.
The width of the depletion region increases, if the diode is further dopend heavily as the movement of charge carrier decreases.
Also, when the p -n junction is light doped, the width of depletion region increases, due to increases in the potential barrier.