The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon P-N juntions are-

The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon P-N junction are

The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon P-N junction are

Assertion:The dominant mechanism for motion of charge carriers in forward and reverse biased silicon P-N junction are drift in both forward and reverse biase. Reason: In reverse biasing, no current flow through the junction.

the dominant mecahnisms for motion of chargecarriers in forward and reverse biased silicon p-n junctions are

The question given below consist of an assertion (A) and a reason ( R). Use the following key to choose the appropriate answer to these questions from the codes (a), (b), ( c) and (d) given below: (a) Both A and R are true and R is the correct explanation of A. (b) Both A and R are true but R is NOT the correct explanation of A. (c) A is true but R is false. (d) A is false and R is also false. Assertion:The dominant mechanism for motion of charge carriers in forward and reverse biased silicon p-n junction are drift in both forward and reverse bias. Reason: In reverse biasing no current flows through the junction.

What is forward and reverse biased in P.N. junction?

What accounts for the flow of charge carriers in forward and reverse biasing of sillicon P-N diode-