A semiconductor has equal electron and hole concentration of `2 xx 10^(8)m^(-3)`. On doping with a certain impurity, the hole concertraction increases to `4 xx 10^(10)m^(-3)`. (i) What type of semiconductor is obtained on doping? (ii) Calculate the new electron hole concentration of the semiconductor. (iii) How does the energy gap very with doping?
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### Step-by-Step Solution:
**Given:**
- Initial electron concentration, \( n_i = 2 \times 10^8 \, \text{m}^{-3} \)
- Initial hole concentration, \( p_i = 2 \times 10^8 \, \text{m}^{-3} \)
- New hole concentration after doping, \( p_f = 4 \times 10^{10} \, \text{m}^{-3} \)
**(i) Determine the type of semiconductor after doping:**
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