A semiconductor is made extrinsic by adding trivalent impurity. The resulting p-type semiconductor should be of conductivity `12 mho m^(-1)`. Mobility of holes is `400 cm^(2)V^(-1)s^(-1)`. Neglecting electron contribution find the number density of accetor atoms. charge on an electron`= 1.6xx10^(-19) C`.
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Here, `sigma=12mho m^(-1),` `mu_(h)=400cm^(2)V^(-1)s^(-1)` `=400xx10^(-4)m^(2)V^(-1)s^(-1)`, As `sigma=eN_A mu_(h)` or `N_A=sigma/(emu_(h))=(12)/((1.6xx10^(-19))xx(400xx10^(-4)))` `=1.875xx10^(21)m^(-3)`
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