On doping germanium with donor atoms of density `10^(17) cm^(-3)`, find its conductivity in mho/cm, if `mu=3800 cm^(2)//V-s`.
Text Solution
Verified by Experts
`sigma=n e mu_(e)=10^(17)xx1.6xx10^(-19)xx3800` `=60.8 mho//cm`.
Topper's Solved these Questions
ELECTRONIC DEVICES
PRADEEP|Exercise SAMPLE PROBLEM|2 Videos
ELECTRONIC DEVICES
PRADEEP|Exercise CONCEPTUAL PROBLEMS|1 Videos
ELECTROMAGNETIC WAVES
PRADEEP|Exercise II Focus multiple choice question|5 Videos
ELECTROSTATICS
PRADEEP|Exercise ASSERTION-REASON TYPE QUESTIONS|2 Videos
Similar Questions
Explore conceptually related problems
On doping germanium with donor atoms of density 10^(17)cm^(-3) , find its conductivity if mobility of electrons is 3800 cm^(2)//V-s and intrinsic carrier concentration is 2.5xx10^(13)cm^(-3) . Also find the ratio of conductivity of doped germanium and pure germanium.
The number desnity of donor atoms which have to be added to an intrinsic germanium semiconductor to produce an n-type semiconductor of conductivity 5 ohm^(-1) cm^(-1) is axx10^(15)cm^(-3) . Given that the mobility of electron in n-type Ge is 3900 cm^(2)//Vs , Neglect the contribution of holes to conductivity. What is the integer value of a?
The electron mobility in N -type germanium is 3900cm^(2)//v-s and its conductivity is 6.24 mho//cm , then impurity concentration will be if the effect of cotters is negligible
(a) Find the conductivity of intrinsic silon at 300K . It is given that n_(i) at 300K in silicon is 1.5x10^(10)//cm ^(3) and the mobilities of electrons and holes in silicion are 1300cm^(2)//V-sec and 500 cm^(2)//V-sec respectively. (b) if donor type impurity is added to the extent of 1 impurity atom in 10^(8) sillicon atoms, find the conductivity. (c ) if acceptor inpurity is added to the extent of 1 impurity atom in 10^(8) silicon atoms,find the conductivuity. Given: number of atoms//m^(3) for Si=5xx10^(28)
A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) Ratio of conductivity of doped silicon and pure silicon semiconductor is
A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) The conductivity of doped semiconductor (in Sm^(-1)) is
A semiconductor has an electron concentration of 8xx10^(13) per cm^(3) and a hole concentration of 5xx10^(12) per cm^(3) . The electron mobilityis 25,000 cm^(2)V^(-1)sec^(-1) and the hole mobility is 100cm^(2)V^(-1)sec^(-1) and the hole mobility is 100cm^(2)V^(-1)sec^(-1) (i) The semiconductor is n -type (ii) the semiconductor is p -type (iii) the conductivity is 320m mho cm^(-1) (iv) the conductivity is 80m mho cm^(-1)
