In a transistor, forward bias voltage is always low as compared to reverse bias voltage. Why?
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In a transistor, emitter-base junction is forward biased with low voltage battery and collector-base junction is reverse biased with high voltage battery. If forward bias voltage is made large, the majority carriers in emitter will drift towards the collector through base region with large velocity. Since their number is also large, a large heat is produced which breaks up the covalent bonds and the transistor gets spoiled. However, if the reverse bias voltage applied to collector is large, it simply collects the majority carriers easily, comimg from emitter through base, but no heating effect is produced nor breaking of covalent bond takes place in transistor.
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