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If resistivity of pure silicon is 3000Om...

If resistivity of pure silicon is `3000Omegam`, and the electron and hole mobilities are `0.12 m^(2)V^(-1)s^(-1)` and `0.045m^(2)V^(-1)s^(-1)` respectively, determine the resistivity of a specimen of the material when `10^(19)` atoms of phosphorous are added per `m^(3)` are also added. Given charge on electron `=1.6xx10^(-19)C`.

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To determine the resistivity of a specimen of silicon after doping with phosphorus, we can follow these steps: ### Step 1: Understand the Given Data - Resistivity of pure silicon, ρ = 3000 Ω·m - Electron mobility, μ_e = 0.12 m²/V·s - Hole mobility, μ_h = 0.045 m²/V·s - Doping concentration of phosphorus, N_d = 10^19 atoms/m³ - Charge of an electron, e = 1.6 x 10^(-19) C ...
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