Using the necessary circuit diagram, show how the V-I characteristics of a p-n junction are obtained in (i) forward biasing (ii) Reverse biasing. How are these characteristics made use of in rectification?

(a) state briefly the processes involved in the formation of p-n how the depletion region is formed (b) using the necessary ciruit diagrams show p-n jucntion are obtained in (i) forward biasing (ii) reverse biasing how these characteiistics are made use of in recitifcation

In V - I characteristics of p-n junction in reverse biasing results in

(a). Explains briefly with the help of a circuit diagram how V-I characteristics of a p-n junction diode are obtainedin (i) forward bias, and (ii) reverse bias. (b). A photo diode is fabricated from a semiconductor with a band gap of 2.8 EV. Can it detect wave length of 6000. nm? Justify.

P-N junction biasing and characteristics

What happens to the width of depletion layer of a p-n junction when it is (i) forward biased, (ii) reverse biased?

What is the deffect on current when a p-n diode is (i) forward biased (ii) reverse biased