Pure `Si` at `500K` has equal number of electron `(n_(e))` and hole `(n_(h))` concentration of `1.5xx10^(16)m^(-3)`. Dopping by indium. Increases `n_(h)` to `4.5xx10^(22) m^(-3)`. The doped semiconductor is of

Explanation

Here, `n_(i)=1.5xx10^(16)m^(-3), n_(h)=4.5xx10^(22)m^(-3)`
`n_(e)=n_(i)^(2)/n_(h)=((1.5xx10^(16))^(2))/(4.5xx10^(22))=5xx10^(9)m^(-3)`