Home
Class 12
PHYSICS
Find the number density of impurity atom...

Find the number density of impurity atoms that must be added to a pure silicon crystal inorder to convert it to have resistivity (i) `10^(-1)Omegam` n-type silicon (ii) `10^(-1)Omegam` p-type silicon. Give for silicon: `mu_(e)=0.135m^(2)V^(-1)s^(-1)`
and `mu_(h)=0.048m^(2)V^(-1)s^(-1)`.

Text Solution

Verified by Experts

(i) `1/rho=en_(e)mu_(e) or n_(e)=(1)/(rho emu_(e)) (ii) n_(h)=(1)/(rho emu_(h))`
Promotional Banner

Topper's Solved these Questions

  • ELECTRONIC DEVICES

    PRADEEP|Exercise LONG QUESTION ANSWER|2 Videos

  • ELECTRONIC DEVICES

    PRADEEP|Exercise PROBLEMS FOR PRACTICE|7 Videos

  • ELECTRONIC DEVICES

    PRADEEP|Exercise HIGHER ORDER THINKING SKILLS|1 Videos

  • ELECTROMAGNETIC WAVES

    PRADEEP|Exercise II Focus multiple choice question|5 Videos

  • ELECTROSTATICS

    PRADEEP|Exercise ASSERTION-REASON TYPE QUESTIONS|2 Videos

Similar Questions

Explore conceptually related problems

A battery of emf 2V is connected across a block of length 0.1m and area of cros-section 1xx10^(-4)m^(2) . If the block is of intrinsic silocon at 300K , find the electron and hole currents. What will be the magnitude of the total current? What will be the magnitude of the total current if germanium is used instead of silicon? Given that for Si at 300K : mu_(e)=0.135m^(2)V^(-1)s^(-1),mu_(h)=0.048m^(2)V^(-1)s^(-1) and intristic carrier concentration n_(i)=1.5xx10^(16)m^(-3) . For Ge at 300K: mu_(e)=0.39m^(2)V^(-1)s^(-1),mu_(h)=0.19m^(2)V^(-1)s^(-1) and n_(i)=2.4xx10^(19)m^(-3)

The resistance of a wire of length 330m and cross-section area 1.0 mm^(2) made of material of resistivity 1.0 xx 10^(-7) Omegam is:

Determine the number density of donor atoms which have to be added to an intrinsic germanium to produce an n -type semiconductor of conductity 0.06Sm^(-1) . Given the mobility of electrons =0.39m^(2)V^(-1)s^(-1) . Neglect the contribution of holes to the conductivity.

What is the conductivity of a semiconductor (in Omega^(-1) m^(-1) ) if electron density = 5 xx 10^(12) cm^(-3) and hole density = 8 xx 10^(13) cm^(-3) ? (mu_(e) = 2.3 V^(-1) s^(-1)m^(2), mu_(h) = 0.01 m^(2) V^(-1) s^(-1))

A semiconductor has an electron concentration of 0.45 xx 10^(12) m^(-3) and a hole concentration of 5.0 xx 10^(20) m^(-3) . Calculate its conductivity. Given electron mobility = 0.135 m^(2) V^(-1) s^(-1) , hole mobility = 0.048 m^(2) V^(-1) s^(-1) ,

Determine the number density of donor atoms which have to be added to an intrinsic germanium semiconductor to produce an n-type semiconductor of conductivity 5Omega^(-1)cm^(-1) , given that the mobility of electron in n-type germanium is 3900 cm^(2)V^(-1)s^(-1) . Neglect the contribution of holes to conductivity.

An intrinsic semiconductor has a resistivity of 0.50 Omega m at room temperature. Find the intrinsic carrier concentration if the mobilities of electrons and holes are 0.39 m^2 V^(-1) s^(-1) and 0.11 m^2 V^(-1) s^(-1) respectively

PRADEEP-ELECTRONIC DEVICES-Exercise
  1. A doped semiconductor has impurity levels 20 meV below the conduction ...

    Text Solution

    |

  2. Pure Si at 500K has equal number of electron (n(e)) and hole (n(h)) co...

    Text Solution

    |

  3. Find the number density of impurity atoms that must be added to a pure...

    Text Solution

    |

  4. Determine the number density of donor atoms which have to be added to ...

    Text Solution

    |

  5. On doping germanium with donor atoms of density 10^(17)cm^(-3), find i...

    Text Solution

    |

  6. The energy of a photon of sodium light wavelength 5890 Å equals the en...

    Text Solution

    |

  7. Calculate the number of states per cubic metre of sodium in 3s band. T...

    Text Solution

    |

  8. Find the current produced at room temperature in a pure germanium plat...

    Text Solution

    |

  9. If resistivity of pure silicon is 3000 Omega meter, and the electron a...

    Text Solution

    |

  10. The V-I characteristics of a silicon diode is given in Fig .Calculate ...

    Text Solution

    |

  11. A p-n junction is fabricated from a semiconductor with band gap of 3.0...

    Text Solution

    |

  12. The width of depletion region in a P-N junction diode is 500 nm and an...

    Text Solution

    |

  13. Calculate the current through the circuit and the potential difference...

    Text Solution

    |

  14. A sinusoidal voltage of rms value 200 volt is connected to a diode and...

    Text Solution

    |

  15. Find the current through the resistance R in Fig if R =10 Omega and R...

    Text Solution

    |

  16. A silicon p-n junction diode whose knee voltage is 0.7 V is connected ...

    Text Solution

    |

  17. Assuming that the resistance of the meters are negligible, what will b...

    Text Solution

    |

  18. The applied input a.c. to a half wave rectifier is 120 watt. The d.c. ...

    Text Solution

    |

  19. Find the average value of d.c. voltage that can be obtained from the h...

    Text Solution

    |

  20. In a photo diode the conductivity increases when the material is expos...

    Text Solution

    |