Home
Class 12
PHYSICS
The electrical conductivity of a semicon...

The electrical conductivity of a semiconductor increases when electromagnatic radiation of wavelength shorter than 2480 nm is incident on it. The band gap (in eV) for the semiconductor is `[hc=1242 eV nm]`

A

0.9

B

0.7

C

0.5

D

1.1

Text Solution

Verified by Experts

The correct Answer is:
C

As `lambda_(max)=2480nm, :. Band gap E_(g)=(hc)/lambda_(max)`
`:. E_(g)=(1242 eV nm)/(2480 nm)~~0.5 eV`
Promotional Banner

Topper's Solved these Questions

  • ELECTRONIC DEVICES

    PRADEEP|Exercise LONG QUESTION ANSWER|2 Videos
  • ELECTRONIC DEVICES

    PRADEEP|Exercise PROBLEMS FOR PRACTICE|7 Videos
  • ELECTRONIC DEVICES

    PRADEEP|Exercise HIGHER ORDER THINKING SKILLS|1 Videos
  • ELECTROMAGNETIC WAVES

    PRADEEP|Exercise II Focus multiple choice question|5 Videos
  • ELECTROSTATICS

    PRADEEP|Exercise ASSERTION-REASON TYPE QUESTIONS|2 Videos

Similar Questions

Explore conceptually related problems

The electricity conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than 2480nm is incident on it. The band gap (in eV) for the semiconductor is

The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than 2480 nm is incident on it. The band gap in (eV) for the semiconductor is.

The electrical conductivity of a semiconductor increases wen electromagnetic radiations of wavelength shorter than 2480 nm is incident on it. The band gap (in eV) for the semiconductor is [ hc = 1242 e V n m ]

The electrical conductivity of semicondutor increases when electromagnetic radiation of wavelength shorter than 29800 Å is incident on it. The band gap for the semiconductor is

The electrical conductivity of semicondutor increases when electromagnetic radiation of wavelength shorter than 24800Å is incident on it. The band gap for the semiconductor is

The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than 1240 nm is incident on it. The forbidden band energy for the semi conductor is (in eV).

The electrical conductivity of a semiconductor increases when electromagnatic radiation of wavelength shorter than 2480 nm is incident on it. Find the band gap of the semiconductor. Given h=6.63xx10^(-34)Js, and 1eV=1.6xx10^(-19)J .

Conductivity of a semiconuctor increases when a radiation of wavelength is less than 2480 nm is incident on it. The forbidden gap is

The electron condactivety of a samiconductor increases 2480 nm is incident on it . The hand gap in (eV) for the semicondactor is

PRADEEP-ELECTRONIC DEVICES-Exercise
  1. The breakdown in a reverse biased p-n junction diode is more likely to...

    Text Solution

    |

  2. The resistance of an intrisic semiconductor when heated

    Text Solution

    |

  3. The electrical conductivity of a semiconductor increases when electrom...

    Text Solution

    |

  4. Which one of the following bonds produces a solid that reflects light ...

    Text Solution

    |

  5. An electric field us applied to a semiconductor.Let the number of char...

    Text Solution

    |

  6. The probbility of electrons to be found in the conduction band of an i...

    Text Solution

    |

  7. If the ratio of the concentration of electron to that of holes in a se...

    Text Solution

    |

  8. C and Si both have same lattice structure, having 4 bonding electrons ...

    Text Solution

    |

  9. The energy gap between conductionband and valence band is of the order...

    Text Solution

    |

  10. A semiconductor is known to have an electron concentric of 8xx10^(13)/...

    Text Solution

    |

  11. A Ge specimen is dopped with Al. The concentration of acceptor atoms i...

    Text Solution

    |

  12. Pure Si at 500K has equal number of electron (n(e)) and hole (n(h)) co...

    Text Solution

    |

  13. Mobility of electron and holes in a sample of intristic germanium at r...

    Text Solution

    |

  14. In n-type semiconductor when when all donor states are filled, then th...

    Text Solution

    |

  15. In a semiconductor material (1//5)th of the total current is carried b...

    Text Solution

    |

  16. The number density of free electrons in the semiconductor is 10^(18)m^...

    Text Solution

    |

  17. A semiconductor having electron and linear mobilities mu(n) and mu(p) ...

    Text Solution

    |

  18. Identify the semiconductor device where characteristics are given belo...

    Text Solution

    |

  19. If a p-n junction diode, a square input signal of 10 V is applied as s...

    Text Solution

    |

  20. The dominant mechanisms for motion of charge carriers in forward and r...

    Text Solution

    |