Home
Class 12
PHYSICS
If a p-n junction diode, a square input ...

If a `p-n` junction diode, a square input signal of `10 V` is applied as shown.

Then the out put signal across `R_(L)` will be
.

A

B

C

D

Text Solution

Verified by Experts

The correct Answer is:
C

During the positive half cycle, the p-n junction is forward biased, offers minimum resistance. Hence, we get output across `R_(L)`. During the negative half cycle, p-n junction is reverse biased, offers maximum resistance, hence no output across `R_(L)`.
Promotional Banner

Topper's Solved these Questions

  • ELECTRONIC DEVICES

    PRADEEP|Exercise LONG QUESTION ANSWER|2 Videos
  • ELECTRONIC DEVICES

    PRADEEP|Exercise PROBLEMS FOR PRACTICE|7 Videos
  • ELECTRONIC DEVICES

    PRADEEP|Exercise HIGHER ORDER THINKING SKILLS|1 Videos
  • ELECTROMAGNETIC WAVES

    PRADEEP|Exercise II Focus multiple choice question|5 Videos
  • ELECTROSTATICS

    PRADEEP|Exercise ASSERTION-REASON TYPE QUESTIONS|2 Videos

Similar Questions

Explore conceptually related problems

If in a p-n junction diode , a squire input single of 10 V is applied as shown

If in a p - n junction diode , a square input signal of 10 V is applied as shown Then the output signal across R_L will be

If in a p - n junction diode , a square input signal of 10 V is applied as shown Then the output signal across R_L will be

If a pn junction dide, a square input signal of 10 V is applied as shown then the outuput signal across R_(1) will be

If an a p-n junction, a square input signal of 10V is applied, as shown then the output across R_(L) will be

Draw the output signal in a p-n junction diode when a square input singnal of 10 v as is applied across it

If the following input signal is sent through a P-N junction diode, then the output signal across R_L will be -

PRADEEP-ELECTRONIC DEVICES-Exercise
  1. A semiconductor having electron and linear mobilities mu(n) and mu(p) ...

    Text Solution

    |

  2. Identify the semiconductor device where characteristics are given belo...

    Text Solution

    |

  3. If a p-n junction diode, a square input signal of 10 V is applied as s...

    Text Solution

    |

  4. The dominant mechanisms for motion of charge carriers in forward and r...

    Text Solution

    |

  5. The circuit shown in figure (1) Contains two diodes each with a forwar...

    Text Solution

    |

  6. Which one of the following represents forward bias diode?

    Text Solution

    |

  7. A sinusiodal voltage of rms value 200 volt is connected to the diode a...

    Text Solution

    |

  8. In the given figure, a diode D is connected to an external resistance ...

    Text Solution

    |

  9. A diode having potential difference 0.5 V across its junction which do...

    Text Solution

    |

  10. A zener diode, having breakdown voltage equal to 15 V is used in a vol...

    Text Solution

    |

  11. The barrier potential of a p-n junction depends on : (i) type of semic...

    Text Solution

    |

  12. The number of minority carriers crossing the junction of a diode depen...

    Text Solution

    |

  13. A semiconductor X is made by dopping a germanium crystal with arsenic ...

    Text Solution

    |

  14. A full wave rectifier circuit along with the input and output are show...

    Text Solution

    |

  15. The equivalent resistance of the circuit across AB is given by .

    Text Solution

    |

  16. A p-n junction has acceptor impurity concentration of 10^(17) cm^(-3) ...

    Text Solution

    |

  17. The diode shown in the circuit is a silicon diode. The potential diffe...

    Text Solution

    |

  18. In the circuit Fig., what is the range over which the load resistance ...

    Text Solution

    |

  19. Two Zener diodes having specification 12V, 1/4W are connected in serie...

    Text Solution

    |

  20. The graph shown in Fig. represents the I-V characteristics of a zener ...

    Text Solution

    |