The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon `P-N` junction are

Options

A. drift in forward bias and diffusion in reverse bias
B. diffusion in forward bias and drift in reverse bias
C. diffusion in both forward and the reverse bias
D. drift in both forward and reverse bias

Answer

B

Explanation

Under the effect of electric field applied, the drift of charge carriers is from lower concentration to higher concentration and diffusion of charge carriers is from higher concentration to lower concentration. In forward biasing diffusion is more than drift and in reverse biasing, drift is more than diffusion.