Home
Class 12
PHYSICS
The number of minority carriers crossing...

The number of minority carriers crossing the junction of a diode depends primarily on the

A

concentration of doping impurities

B

magnitude of potential barrier

C

magnitude of the forward bias voltage

D

rate of thermal generation of electron-hole pair

Text Solution

Verified by Experts

The correct Answer is:
D
The number of minority carriers crossing the junction diode depends on rate of thermal generation diode depends on rate of thermal generation of electron-hole pair.
Promotional Banner

Topper's Solved these Questions

  • ELECTRONIC DEVICES

    PRADEEP|Exercise LONG QUESTION ANSWER|2 Videos

  • ELECTRONIC DEVICES

    PRADEEP|Exercise PROBLEMS FOR PRACTICE|7 Videos

  • ELECTRONIC DEVICES

    PRADEEP|Exercise HIGHER ORDER THINKING SKILLS|1 Videos

  • ELECTROMAGNETIC WAVES

    PRADEEP|Exercise II Focus multiple choice question|5 Videos

  • ELECTROSTATICS

    PRADEEP|Exercise ASSERTION-REASON TYPE QUESTIONS|2 Videos

Similar Questions

Explore conceptually related problems

P-N junction diode

P-N junction diode

P-N junction diodes

In a PN -junction diode

In a P-N junction diode :

The minority current in a p-n junction is :–

The PN junction diode is used as

The reverse biasing in a PN junction diode

PRADEEP-ELECTRONIC DEVICES-Exercise
  1. A zener diode, having breakdown voltage equal to 15 V is used in a vol...

    Text Solution

    |

  2. The barrier potential of a p-n junction depends on : (i) type of semic...

    Text Solution

    |

  3. The number of minority carriers crossing the junction of a diode depen...

    Text Solution

    |

  4. A semiconductor X is made by dopping a germanium crystal with arsenic ...

    Text Solution

    |

  5. A full wave rectifier circuit along with the input and output are show...

    Text Solution

    |

  6. The equivalent resistance of the circuit across AB is given by .

    Text Solution

    |

  7. A p-n junction has acceptor impurity concentration of 10^(17) cm^(-3) ...

    Text Solution

    |

  8. The diode shown in the circuit is a silicon diode. The potential diffe...

    Text Solution

    |

  9. In the circuit Fig., what is the range over which the load resistance ...

    Text Solution

    |

  10. Two Zener diodes having specification 12V, 1/4W are connected in serie...

    Text Solution

    |

  11. The graph shown in Fig. represents the I-V characteristics of a zener ...

    Text Solution

    |

  12. The width of depletion region in p-n junction diode is 500 nm and an i...

    Text Solution

    |

  13. Two junction diodes, one of germanium (Ge) and other of silicon (Si) ...

    Text Solution

    |

  14. The forward biased diode connection is

    Text Solution

    |

  15. In the circuit, Fig.he current through the zener diode is

    Text Solution

    |

  16. The I-V characteristic of an LED is.

    Text Solution

    |

  17. The currect voltage relation of a diode is given by 1 = (e^(van v//T)...

    Text Solution

    |

  18. The given graph represents V-I characteristic for a semiconductor devi...

    Text Solution

    |

  19. For a common emiter configuration if a and beta have their usualy mean...

    Text Solution

    |

  20. The input signal given to a CE amplifier having a voltage gain of 150 ...

    Text Solution

    |