When a p-type semiconductor is brought into a close contact with n-type semiconductor, we get a p-n junction with a barrier potential `0.4V` and the width of depletion region is `4.0 xx 10^(-7)m`. this p-n junction is forwaed biased with a battery of voltage `3V` adn negligible internal resistance, in series with a resistance of resistance R, ideal milliammeter and key K as shown in Fig.

The intensity of the electric field in the depletion region when p-n junction is unbiased is

Options

A. `0.5xx10^(6) Vm^(-1)`
B. `1.0xx10^(6) Vm^(-1)`
C. `2.0xx10^(6) Vm^(-1)`
D. `1.5xx10^(6) Vm^(-1)`

Answer

B

Explanation

`E=V_B/d=0.4/(4.0xx10^(-7))=1.0xx10^(6) Vm^(-1)`