Home
Class 12
PHYSICS
Assertion : The energy gap between the v...

Assertion : The energy gap between the valence band and conduction band is greater in silicon than in germanium.
Reason : Thermal energy produces fewer minority carriers in silicon than in germanium.

A

if both the Assertion and Reason are true and the Reason is the correct explanation of Assertion.

B

if both the Assertion and Reason are true but the reason in not a correct explanation of the Assertion.

C

if the Assertion is true but the Reason is false.

D

if both Assertion and Reason are false.

Text Solution

AI Generated Solution

The correct Answer is:
To solve the question regarding the assertion and reason about the energy gap between silicon and germanium, we will analyze both statements step by step. ### Step 1: Analyze the Assertion The assertion states that "The energy gap between the valence band and conduction band is greater in silicon than in germanium." - **Explanation**: The energy gap (band gap) is a critical property of semiconductors. Silicon (Si) has a band gap of about 1.1 eV, while germanium (Ge) has a band gap of about 0.66 eV. This means that silicon has a greater energy gap compared to germanium. ### Step 2: Analyze the Reason The reason states that "Thermal energy produces fewer minority carriers in silicon than in germanium." - **Explanation**: Minority carriers in a semiconductor are the charge carriers that are less in number. In intrinsic semiconductors, the number of electrons in the conduction band (majority carriers) is equal to the number of holes in the valence band (minority carriers). Because silicon has a larger band gap, it requires more thermal energy to excite electrons from the valence band to the conduction band compared to germanium. Therefore, at a given temperature, silicon will have fewer thermally generated minority carriers than germanium. ### Step 3: Determine the Relationship Between Assertion and Reason Now, we need to determine if the reason correctly explains the assertion. - **Explanation**: While both the assertion and the reason are true, the reason does not directly explain why silicon has a larger energy gap than germanium. The larger energy gap is primarily due to the atomic structure and the energy levels of the electrons in silicon compared to germanium, not solely because of the number of minority carriers produced. ### Final Conclusion Based on the analysis: - The assertion is true. - The reason is true but does not correctly explain the assertion. ### Answer The correct option is: Both assertion and reason are true, but the reason is not the correct explanation of the assertion.

To solve the question regarding the assertion and reason about the energy gap between silicon and germanium, we will analyze both statements step by step. ### Step 1: Analyze the Assertion The assertion states that "The energy gap between the valence band and conduction band is greater in silicon than in germanium." - **Explanation**: The energy gap (band gap) is a critical property of semiconductors. Silicon (Si) has a band gap of about 1.1 eV, while germanium (Ge) has a band gap of about 0.66 eV. This means that silicon has a greater energy gap compared to germanium. ### Step 2: Analyze the Reason ...
Promotional Banner

Topper's Solved these Questions

  • ELECTRONIC DEVICES

    PRADEEP|Exercise LONG QUESTION ANSWER|2 Videos
  • ELECTRONIC DEVICES

    PRADEEP|Exercise PROBLEMS FOR PRACTICE|7 Videos
  • ELECTRONIC DEVICES

    PRADEEP|Exercise HIGHER ORDER THINKING SKILLS|1 Videos
  • ELECTROMAGNETIC WAVES

    PRADEEP|Exercise II Focus multiple choice question|5 Videos
  • ELECTROSTATICS

    PRADEEP|Exercise ASSERTION-REASON TYPE QUESTIONS|2 Videos

Similar Questions

Explore conceptually related problems

If the energy gap between valence band and conduction band is 5 eV, then it is

The energy gaps (E_(g)) between valence band and conduction band for diamond, silicon and germanium are in the order

If the energy gap between valence band and conduction band is 10 eV, then the material is a/an

In an insulator, the forbidden energy gap between the valence band and conduction band is of the order of

PRADEEP-ELECTRONIC DEVICES-Exercise
  1. Assertion : Any logic can be constructed using NAND gate Reason : NA...

    Text Solution

    |

  2. Assertion : The electrons in the conduction band have higher energy th...

    Text Solution

    |

  3. Assertion : The energy gap between the valence band and conduction ban...

    Text Solution

    |

  4. Assertion : p-n junction diode can be used even at ultra high frequenc...

    Text Solution

    |

  5. Assertion: Two P-N junction diodes placed back to back, will work as a...

    Text Solution

    |

  6. Assertion : The colour of light emitted by a LED depends on its forwar...

    Text Solution

    |

  7. Assertion : When baseregion has larger width, the collector current in...

    Text Solution

    |

  8. Assertion: NAND or NOR gates are called digital building blocks. Rea...

    Text Solution

    |

  9. Statement-1 : The temperature coefficient of resistance is positive fo...

    Text Solution

    |

  10. Statement-1 : When the temperature of a semiconductor is increased, th...

    Text Solution

    |

  11. Statement-1 : A p-type semiconductor has ney positive charge on it. ...

    Text Solution

    |

  12. Statement-1 : At a fixed temperature, silicon will have a minimum cond...

    Text Solution

    |

  13. Statement-1 : The direction of diffusion current in a junction diode i...

    Text Solution

    |

  14. Statement-1 : A transistor with common emitter mode has current gain 5...

    Text Solution

    |

  15. Assertion: NOT gate is also called inverter circuit. Reason: NOT gat...

    Text Solution

    |

  16. A specimen of silicon is to be made p-type semiconductor. For this one...

    Text Solution

    |

  17. For n-type semiconductor, it is stated that (i) there are more numbe...

    Text Solution

    |

  18. Suppose the energy liberated in the recombination of a hole-electron p...

    Text Solution

    |

  19. The forward characteristic of p-n junction is shown in Fig.What is the...

    Text Solution

    |

  20. In a forward biased PN- junction diode, the potential barrier in the d...

    Text Solution

    |