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Statement-1 : At a fixed temperature, si...

Statement-1 : At a fixed temperature, silicon will have a minimum conductivity when it has a smaller acceptor doping.
Statement-2 : The conductivity of an intrinsic semiconductor is slightly higher than that of a lightly doped p-type semiconductor.

A

Statement-1 is true, Statement-2 is true, Statement-2 is a correct explanation of Statement-1.

B

Statement-1 is true, Statement-2 is true, Statement-2 is not a correct explanation of Statement-1.

C

Statement-1 is true, Statement-2 is false.

D

Statement-1 is false, Statement-2 is true.

Text Solution

Verified by Experts

The correct Answer is:
C
Here Assertion is correct but Reason is wrong, as conductivity of an intrinsic semiconductor is less than of a lightly doped p-type semiconductor.
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PRADEEP-ELECTRONIC DEVICES-Exercise
  1. Statement-1 : When the temperature of a semiconductor is increased, th...

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  2. Statement-1 : A p-type semiconductor has ney positive charge on it. ...

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  3. Statement-1 : At a fixed temperature, silicon will have a minimum cond...

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  4. Statement-1 : The direction of diffusion current in a junction diode i...

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  5. Statement-1 : A transistor with common emitter mode has current gain 5...

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  6. Assertion: NOT gate is also called inverter circuit. Reason: NOT gat...

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  7. A specimen of silicon is to be made p-type semiconductor. For this one...

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  8. For n-type semiconductor, it is stated that (i) there are more numbe...

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  9. Suppose the energy liberated in the recombination of a hole-electron p...

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  10. The forward characteristic of p-n junction is shown in Fig.What is the...

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  11. In a forward biased PN- junction diode, the potential barrier in the d...

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  12. What is the current through 1Omega resistance? Fig.

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  13. In an NPN transistor the collector current is 24 mA. If 80% of electro...

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  14. The conduction band of a solid is partially filled at 0 K.will it be a...

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  15. In a good conductor of electricity the type of bonding that exists is ...

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  16. In intrinsic semiconductor at room temperature, the number of electron...

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  17. The forbidden energy band gap in conductors, semiconductors and insula...

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  18. In an n-type semiconductor, the fermi level lies 0.3 eV below the cond...

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  19. n-type semiconductor is obtained when

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  20. A p-type semiconductor is obtained by doping silicon with

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